BSC014N04LSATMA1 vs BSC155N06NDATMA1 对比
详细并排对比 BSC014N04LSATMA1 出自 Infineon 和 BSC155N06NDATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC014N04LSATMA1 | BSC155N06NDATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.74 | $0.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Ta | 32 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| RDS(on) max at VGS=10 V | 1.4 mOhm | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 96 W | — |
| Gate-Source Voltage (VGS) max | 20 V | — |
| 工作温度范围 | -55C to +175C | -55 C to +175 C |
| 封装 | SuperSO8 (TDSON-8 FL) 5x6 mm | PG-TDSON-8-4 (SuperSO8 5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | Trench (OptiMOS 5, thin-wafer) | OptiMOS 3 (N-channel trench) |
| RoHS 状态 | Compliant | Compliant (Pb-free plating) |
| MSL 等级 | 1 (unlimited) | 1 |
| Part Number | — | BSC155N06NDATMA1 |
| Configuration | — | Dual N-channel MOSFET array |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tc=25C | — | 20 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance RDS(on) max at VGS=10V | — | 15.5 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (Tc=25C) | — | 50 W |
| Lead-Free Plating | — | Yes |
| Shoot-Through Immunity Qgd/Qgs | — | < 0.8 |