BSC027N04LSGATMA1 vs BSC0504NSIATMA1 对比

详细并排对比 BSC027N04LSGATMA1 出自 Infineon 和 BSC0504NSIATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 BSC027N04LSGATMA1 BSC0504NSIATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.54 $0.00
Manufacturer Infineon Technologies —
Product Family OptiMOS 3 —
晶体管类型 N-Channel MOSFET N-channel MOSFET
Drain-Source Voltage (VDS) 40 V —
Gate-Source Voltage (VGS) max ±20 V —
Continuous Drain Current (ID) at Ta=25°C 24 A —
Continuous Drain Current (ID) at Tc=25°C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max @ VGS=10V 2.7 mΩ —
Power Dissipation (Ta=25°C) 2.5 W —
功耗(TC=25°C) 83 W —
工作温度范围 -55°C to +150°C [DATA_NEEDED: operating temperature range]
封装 PG-TDSON-8-1 (SuperSO8 5x6) PG-TDSON-8-6
安装类型 Surface Mount Surface Mount
Technology OptiMOS 3 (Trench) —
MSL 等级 1 —
RoHS 状态 Compliant unknown
无卤 Yes —
Drain-to-Source Voltage — 30 V
Continuous Drain Current at Ta — 21 A
Continuous Drain Current at Tc — 72 A
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 30 W
Technology Family — OptiMOS 5
引脚数 — 8 pins
Exposed Pad — Yes, according to distributor package description
On-State Resistance — [DATA_NEEDED: on-state resistance]
Gate Charge — [DATA_NEEDED: gate charge]
栅极阈值电压 — [DATA_NEEDED: gate threshold voltage]
热阻 — [DATA_NEEDED: thermal resistance]
AEC-Q100 Qualification — [DATA_NEEDED: AEC-Q100 qualification]
Lead-Free Status — unknown
Halogen-Free Status — unknown
REACH Status — unknown

数据手册与资源

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