BSC027N04LSGATMA1 vs IPB038N12N3GATMA1 对比
详细并排对比 BSC027N04LSGATMA1 出自 Infineon 和 IPB038N12N3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC027N04LSGATMA1 | IPB038N12N3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.54 | $1.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | OptiMOS 120V |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Continuous Drain Current (ID) at Ta=25°C | 24 A | — |
| Continuous Drain Current (ID) at Tc=25°C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10V | 2.7 mΩ | — |
| Power Dissipation (Ta=25°C) | 2.5 W | — |
| 功耗（TC=25°C） | 83 W | — |
| 工作温度范围 | -55°C to +150°C | -55C to +175C (junction) |
| 封装 | PG-TDSON-8-1 (SuperSO8 5x6) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | OptiMOS 3 (Trench) | OptiMOS trench MOSFET |
| MSL 等级 | 1 | — |
| RoHS 状态 | Compliant | Compliant |
| 无卤 | Yes | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 120 V |
| Continuous Drain Current (Id) @ Tc | — | 120 A |
| Power Dissipation (Pd) @ Tc | — | 300 W |
| On-State Resistance (Rds(on)) | — | 3.8 mOhm (typical) |
| 封装 / 外壳 | — | PG-TO263-3 (D2PAK) |
| Gate Drive | — | Logic-level compatible |
| Standard Package Quantity | — | 1000 (Tape & Reel) |
| Avalanche Rated | — | Yes |