BSC027N10NS5ATMA1 vs BSC042NE7NS3GATMA1 对比

详细并排对比 BSC027N10NS5ATMA1 出自 Infineon 和 BSC042NE7NS3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC042NE7NS3GATMA1 BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon

BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon

BSC042NE7NS3GATMA1 ✓ 量产中

规格对比

参数 BSC027N10NS5ATMA1 BSC042NE7NS3GATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 不推荐新设计 有效
库存状态 有库存 有库存
单价(USD) $1.10 $1.24
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC027N10NS5ATMA1 BSC042NE7NS3GATMA1
Technology OptiMOS 5 (100V) OptiMOS 3
Channel Type N-Channel —
Drain-Source Voltage (VDS) 100 V 75 V
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] —
Continuous Drain Current (ID) at Ta 23 A 19 A
Continuous Drain Current (ID) at Tc 100 A 100 A
Pulsed Drain Current (IDM) 194 A —
On-Resistance RDS(on) Max at VGS=10V 2.7 mOhm —
Power Dissipation (Ta) 3 W —
Power Dissipation (Tc) 214 W —
封装 PG-TSON-8-3 (SuperSO8 5x6 mm) PG-TDSON-8-1 (SuperSO8 5x6 mm)
安装类型 Surface Mount Surface Mount
工作温度范围 [DATA_NEEDED: Tj min/max] -55C to +150C
RoHS 状态 Compliant Compliant
MSL 等级 [DATA_NEEDED: MSL rating] 1
Qualification Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) —
晶体管类型 — N-Channel MOSFET
RDS(on) max at VGS=10V — 4.2 mOhm
Gate-Source Voltage (VGS) max — +/-20 V
Gate Threshold Voltage (VGS(th)) typ — 1.7 V
Power Dissipation (PD) at Ta — 2.5 W
Power Dissipation (PD) at Tc — 125 W

数据手册与资源

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