BSC027N10NS5ATMA1 vs BSC146N10LS5ATMA1 对比

详细并排对比 BSC027N10NS5ATMA1 出自 Infineon 和 BSC146N10LS5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC146N10LS5ATMA1 BSC146N10LS5ATMA1 - 100V 44A OptiMOS 5 N-MOSFET | Infineon

BSC146N10LS5ATMA1 - 100V 44A OptiMOS 5 N-MOSFET | Infineon

BSC146N10LS5ATMA1 ✓ 量产中

规格对比

参数 BSC027N10NS5ATMA1 BSC146N10LS5ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 不推荐新设计 有效
库存状态 有库存 有库存
单价(USD) $1.10 $0.74
Manufacturer Infineon Technologies —
Part Number BSC027N10NS5ATMA1 —
Technology OptiMOS 5 (100V) OptiMOS 5 (logic-level)
Channel Type N-Channel —
Drain-Source Voltage (VDS) 100 V —
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] —
Continuous Drain Current (ID) at Ta 23 A —
Continuous Drain Current (ID) at Tc 100 A —
Pulsed Drain Current (IDM) 194 A —
On-Resistance RDS(on) Max at VGS=10V 2.7 mOhm —
Power Dissipation (Ta) 3 W 2.5 W
Power Dissipation (Tc) 214 W 52 W
封装 PG-TSON-8-3 (SuperSO8 5x6 mm) PG-TDSON-8-6 (SuperSO8 5x6 mm)
安装类型 Surface Mount Surface Mount
工作温度范围 [DATA_NEEDED: Tj min/max] -55 C to +150 C (TJ max)
RoHS 状态 Compliant Compliant
MSL 等级 [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Qualification Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) —
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) max — 100 V
Continuous Drain Current (ID) at Tc=25 C — 44 A
Pulsed Drain Current (ID,pulse) — [DATA_NEEDED: IDM]
RDS(on) max at VGS=10 V — 14.6 mOhm
RDS(on) max at VGS=4.5 V — [DATA_NEEDED: RDS(on) at 4.5 V]
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — Logic-level (typ. ~1.7 V)
Avalanche Energy (EAS) — [DATA_NEEDED: EAS]

数据手册与资源

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