BSC027N10NS5ATMA1 vs BSC146N10LS5ATMA1 Comparison
Detailed side-by-side comparison of BSC027N10NS5ATMA1 by Infineon and BSC146N10LS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC027N10NS5ATMA1
BSC027N10NS5ATMA1 - 100V 194A OptiMOS 5 N-MOSFET | Infineon
BSC027N10NS5ATMA1 NrndInfineon
BSC146N10LS5ATMA1
BSC146N10LS5ATMA1 - 100V 44A OptiMOS 5 N-MOSFET | Infineon
BSC146N10LS5ATMA1 β ActiveSpecification Comparison
| Parameter | BSC027N10NS5ATMA1 | BSC146N10LS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Nrnd | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.10 | $0.74 |
| Manufacturer | Infineon Technologies | β |
| Part Number | BSC027N10NS5ATMA1 | β |
| Technology | OptiMOS 5 (100V) | OptiMOS 5 (logic-level) |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 100 V | β |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | β |
| Continuous Drain Current (ID) at Ta | 23 A | β |
| Continuous Drain Current (ID) at Tc | 100 A | β |
| Pulsed Drain Current (IDM) | 194 A | β |
| On-Resistance RDS(on) Max at VGS=10V | 2.7 mOhm | β |
| Power Dissipation (Ta) | 3 W | 2.5 W |
| Power Dissipation (Tc) | 214 W | 52 W |
| Package | PG-TSON-8-3 (SuperSO8 5x6 mm) | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: Tj min/max] | -55 C to +150 C (TJ max) |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Qualification | Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) | β |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) max | β | 100 V |
| Continuous Drain Current (ID) at Tc=25 C | β | 44 A |
| Pulsed Drain Current (ID,pulse) | β | [DATA_NEEDED: IDM] |
| RDS(on) max at VGS=10 V | β | 14.6 mOhm |
| RDS(on) max at VGS=4.5 V | β | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | Logic-level (typ. ~1.7 V) |
| Avalanche Energy (EAS) | β | [DATA_NEEDED: EAS] |