BSC040N08NS5ATMA1 vs ISC058N04NM5ATMA1 对比
详细并排对比 BSC040N08NS5ATMA1 出自 Infineon 和 ISC058N04NM5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC040N08NS5ATMA1 | ISC058N04NM5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.15 | $0.60 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC040N08NS5ATMA1 | — |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS 5 trench MOSFET |
| Drain-Source Voltage (VDS) | 80 V | 40 V |
| Continuous Drain Current (ID, Tc=25C) | 100 A | 63 A |
| Maximum Drain Current (ID, Tc=25C, package-limited) | 121 A | — |
| On-Resistance (RDS(on) max, VGS=10V) | 4 mOhm | — |
| Power Dissipation (Ta=25C, 1in² PCB) | 2.5 W | — |
| Power Dissipation (Tc=25C) | 104 W | — |
| 封装 | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作结温 | -55 C to +175 C | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| RoHS 状态 | Compliant | — |
| MSL 等级 | 1 | — |
| Primary Application | Synchronous rectification in telecom and server power supplies | — |
| Product Family | — | OptiMOS 5 40V Normal Level |
| 晶体管类型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Ta=25C) | — | 17 A |
| On-Resistance Rds(on) max @ VGS=10V, ID=31A | — | 5.8 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | 3.4 V |
| Power Dissipation (TA=25C) | — | 3 W |
| Power Dissipation (TC=25C) | — | 42 W |
| 工作温度范围 | — | -55C to +175C |
| RoHS Compliance | — | RoHS Compliant |
| MSL (Moisture Sensitivity Level) | — | MSL per JEDEC J-STD-020 |
| Gate Drive Level | — | Normal Level (10V VGS recommended) |