BSC040N08NS5ATMA1 vs ISC058N04NM5ATMA1 Comparison
Detailed side-by-side comparison of BSC040N08NS5ATMA1 by Infineon and ISC058N04NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC040N08NS5ATMA1 - 80V 100A 4mOhm OptiMOS 5 MOSFET | Infineon
BSC040N08NS5ATMA1 β ActiveInfineon
ISC058N04NM5ATMA1
ISC058N04NM5ATMA1 - 40V 63A 5.8mOhm OptiMOS 5 N-MOSFET | Infineon
ISC058N04NM5ATMA1 β ActiveSpecification Comparison
| Parameter | BSC040N08NS5ATMA1 | ISC058N04NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.15 | $0.60 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC040N08NS5ATMA1 | β |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS 5 trench MOSFET |
| Drain-Source Voltage (VDS) | 80 V | 40 V |
| Continuous Drain Current (ID, Tc=25C) | 100 A | 63 A |
| Maximum Drain Current (ID, Tc=25C, package-limited) | 121 A | β |
| On-Resistance (RDS(on) max, VGS=10V) | 4 mOhm | β |
| Power Dissipation (Ta=25C, 1inΒ² PCB) | 2.5 W | β |
| Power Dissipation (Tc=25C) | 104 W | β |
| Package | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Junction Temperature | -55 C to +175 C | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | β |
| RoHS Status | Compliant | β |
| MSL Level | 1 | β |
| Primary Application | Synchronous rectification in telecom and server power supplies | β |
| Product Family | β | OptiMOS 5 40V Normal Level |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID, Ta=25C) | β | 17 A |
| On-Resistance Rds(on) max @ VGS=10V, ID=31A | β | 5.8 mOhm |
| Gate Threshold Voltage VGS(th) typ | β | 3.4 V |
| Power Dissipation (TA=25C) | β | 3 W |
| Power Dissipation (TC=25C) | β | 42 W |
| Operating Temperature Range | β | -55C to +175C |
| RoHS Compliance | β | RoHS Compliant |
| MSL (Moisture Sensitivity Level) | β | MSL per JEDEC J-STD-020 |
| Gate Drive Level | β | Normal Level (10V VGS recommended) |