BSC042NE7NS3GATMA1 vs BSC030N03MSGATMA1 对比

详细并排对比 BSC042NE7NS3GATMA1 出自 Infineon 和 BSC030N03MSGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC042NE7NS3GATMA1 BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon

BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon

BSC042NE7NS3GATMA1 ✓ 量产中
Infineon
BSC030N03MSGATMA1 BSC030N03MSGATMA1 - 30V N-Ch MOSFET, 3mΩ OptiMOS | Infineon

BSC030N03MSGATMA1 - 30V N-Ch MOSFET, 3mΩ OptiMOS | Infineon

BSC030N03MSGATMA1 ✓ 量产中

规格对比

参数 BSC042NE7NS3GATMA1 BSC030N03MSGATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.24 $0.43
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC042NE7NS3GATMA1 —
晶体管类型 N-Channel MOSFET —
Technology OptiMOS 3 MOSFET (Metal Oxide)
Drain-Source Voltage (VDS) 75 V 30 V
Continuous Drain Current (ID) at Ta 19 A 21 A
Continuous Drain Current (ID) at Tc 100 A —
RDS(on) max at VGS=10V 4.2 mOhm —
Gate-Source Voltage (VGS) max +/-20 V ±20 V
Gate Threshold Voltage (VGS(th)) typ 1.7 V —
Power Dissipation (PD) at Ta 2.5 W —
Power Dissipation (PD) at Tc 125 W —
工作温度范围 -55C to +150C —
封装 PG-TDSON-8-1 (SuperSO8 5x6 mm) PG-TDSON-8-1 (SuperSO8, 8-pin, exposed pad)
安装类型 Surface Mount Surface Mount
MSL 等级 1 —
RoHS 状态 Compliant Compliant
Series — OptiMOS 3M
FET Type — N-Channel
Continuous Drain Current (ID) at Tc=25°C — 100 A
Drain-Source On-Resistance (RDS(on)) — 3.0 mΩ (typical at VGS=10V)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc=25°C — 69 W
工作结温 — -55°C to +150°C
Drive Voltage (Min/Max RDS(on)) — 4.5V / 10V
Status — Active

数据手册与资源

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