BSC0504NSIATMA1 vs BSZ060NE2LSATMA1 对比

详细并排对比 BSC0504NSIATMA1 出自 Infineon 和 BSZ060NE2LSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSZ060NE2LSATMA1 BSZ060NE2LSATMA1 - 25V 44A OptiMOS N-Channel MOSFET | Infineon

BSZ060NE2LSATMA1 - 25V 44A OptiMOS N-Channel MOSFET | Infineon

BSZ060NE2LSATMA1 ✓ 量产中

规格对比

参数 BSC0504NSIATMA1 BSZ060NE2LSATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $0.27
晶体管类型 N-channel MOSFET —
Drain-to-Source Voltage 30 V —
Continuous Drain Current at Ta 21 A —
Continuous Drain Current at Tc 72 A —
Power Dissipation at Ta 2.5 W —
Power Dissipation at Tc 30 W —
Technology Family OptiMOS 5 —
封装 PG-TDSON-8-6 PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm)
安装类型 Surface Mount Surface Mount
引脚数 8 pins —
Exposed Pad Yes, according to distributor package description —
On-State Resistance [DATA_NEEDED: on-state resistance] —
Gate Charge [DATA_NEEDED: gate charge] —
栅极阈值电压 [DATA_NEEDED: gate threshold voltage] —
热阻 [DATA_NEEDED: thermal resistance] —
工作温度范围 [DATA_NEEDED: operating temperature range] -55C to +150C
AEC-Q100 Qualification [DATA_NEEDED: AEC-Q100 qualification] —
RoHS 状态 unknown Compliant
Lead-Free Status unknown —
Halogen-Free Status unknown —
REACH Status unknown —
Manufacturer — Infineon Technologies
Part Number — BSZ060NE2LSATMA1
Technology — OptiMOS™ (N-Channel Trench MOSFET)
Drain-Source Voltage (VDS) — 25 V
Continuous Drain Current (ID) @ Ta=25C — 12 A
Continuous Drain Current (ID) @ Tc=25C — 44 A
Pulsed Drain Current (IDM) — 44 A
On-Resistance RDS(on) max @ VGS=10V — 6 mOhm
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) @ VGS=4.5V]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) typ — [DATA_NEEDED: VGS(th) typical]
Power Dissipation (Ta) — 2.1 W
Power Dissipation (Tc) — 26 W
MSL 等级 — 1
Shipping Packaging — Tape & Reel

数据手册与资源

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