BSC060P03NS3EGATMA1 vs IRF5305STRRPBF 对比
详细并排对比 BSC060P03NS3EGATMA1 出自 Infineon 和 IRF5305STRRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
BSC060P03NS3EGATMA1 - 30V P-Ch MOSFET 6mΩ 100A OptiMOS | Infineon
BSC060P03NS3EGATMA1 ✓ 量产中
规格对比
| 参数 | BSC060P03NS3EGATMA1 | IRF5305STRRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.38 | $0.62 |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -30 V | — |
| Continuous Drain Current (Ta) | 17.7 A | — |
| Continuous Drain Current (Tc) | 100 A | — |
| On-State Resistance RDS(on) max @ VGS=10V | 6 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | -2.5 V | — |
| Total Gate Charge Qg @ VGS=10V | 81 nC | — |
| Input Capacitance Ciss | 6.02 nF | — |
| Output Capacitance Coss | 2.81 nF | — |
| Reverse Transfer Capacitance Crss | 220 pF | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 83 W | — |
| 工作温度范围 | -55°C to +150°C | — |
| 封装 | PG-TDSON-8-1 (SuperSO8 5x6) | D2PAK (TO-263) Surface Mount |
| Technology | OptiMOS™ P-channel Trench | HEXFET (Advanced Process) |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Compliant | — |
| 晶体管类型 | — | P-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID) at TC | — | -31 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| RDS(on) max @ VGS=-10V | — | 60 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min] |
| Power Dissipation (TC) | — | 110 W |
| Power Dissipation (TA) | — | 3.8 W |
| 工作结温 | — | -55C to +175C |
| Lead-Free / RoHS | — | Yes (Pb-free suffix) |
| Packaging | — | Tape & Reel (TR) |