BSC076N04NDATMA1 vs BSZ068N06NSATMA1 对比
详细并排对比 BSC076N04NDATMA1 出自 Infineon 和 BSZ068N06NSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC076N04NDATMA1 | BSZ068N06NSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.82 | $0.62 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 3 | — |
| Configuration | Dual N-Channel (independent MOSFETs) | — |
| Drain-Source Voltage (VDS) max | 40 V | — |
| Continuous Drain Current (ID) | 20 A (Tc) | — |
| Gate Threshold Voltage (VGS(th)) | 4 V (max, typical) | — |
| On-Resistance RDS(on) max | 7.6 mOhm | 6.8 mΩ @ VGS=10 V |
| Power Dissipation (Ta) | 2.3 W | 2.1 W |
| Power Dissipation (Tc) | 65 W | 46 W |
| Technology | Trench MOSFET (OptiMOS 3) | OptiMOS 5 (trench-gate) |
| Qgd/Qgs Ratio | < 0.8 (high shot-through immunity) | — |
| 工作结温 | -55 C to +175 C | — |
| 封装 / 外壳 | PG-TDSON-8-4 (SuperSO8, 5x6 mm) | — |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS / Pb-Free | Compliant (Pb-free plating) | — |
| FET Type | 2x N-Channel MOSFET array | N-Channel |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Tc) | — | 40 A |
| Continuous Drain Current (ID, Ta) | — | [DATA_NEEDED: ID at Ta] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg typ] |
| 工作温度范围 | — | -55 °C to +150 °C |
| 封装 | — | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| MSL 等级 | — | MSL1 |
| RoHS / Halogen-Free | — | RoHS compliant, halogen-free |