BSC155N06NDATMA1 vs BSC0993NDATMA1 对比

详细并排对比 BSC155N06NDATMA1 出自 Infineon 和 BSC0993NDATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC155N06NDATMA1 BSC155N06NDATMA1 - Dual 60V 20A OptiMOS N-MOSFET | Infineon

BSC155N06NDATMA1 - Dual 60V 20A OptiMOS N-MOSFET | Infineon

BSC155N06NDATMA1 ✓ 量产中

规格对比

参数 BSC155N06NDATMA1 BSC0993NDATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.62 $1.32
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC155N06NDATMA1 —
Technology OptiMOS 3 (N-channel trench) OptiMOS 5 trench MOSFET
Configuration Dual N-channel MOSFET array Dual N-Channel (Array)
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Tc=25C 20 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-State Resistance RDS(on) max at VGS=10V 15.5 mOhm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
工作温度范围 -55 C to +175 C -55C to +150C (junction)
封装 PG-TDSON-8-4 (SuperSO8 5x6 mm) PG-TISON-8
安装类型 Surface Mount Surface Mount
Power Dissipation (Tc=25C) 50 W —
MSL 等级 1 [DATA_NEEDED: MSL level]
RoHS 状态 Compliant (Pb-free plating) Compliant
Lead-Free Plating Yes —
Shoot-Through Immunity Qgd/Qgs < 0.8 —
Product Series — OptiMOS 5 30V
Drain-Source Voltage (Vds) — 30 V
Continuous Drain Current (Id) @ Ta — 17 A
Channel Mode — Enhancement
ESD Protection — Yes (integrated)
Lead-Free — Yes
Rds(on) max @ Vgs=10V — [DATA_NEEDED: Rds(on) value]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]

数据手册与资源

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