BSD235CH6327XTSA1 vs BTS6133DAUMA1 对比
详细并排对比 BSD235CH6327XTSA1 出自 Infineon 和 BTS6133DAUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
BSD235CH6327XTSA1 - 20V Complementary N+P MOSFET | Infineon OptiMOS™
BSD235CH6327XTSA1 ✓ 量产中
规格对比
| 参数 | BSD235CH6327XTSA1 | BTS6133DAUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | Power MOSFET Drivers |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.12 | $1.98 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS™ | — |
| Configuration | N+P complementary dual MOSFET | — |
| Drain-to-Source Voltage (VDS) | 20 V | — |
| N-Channel Continuous Drain Current (ID) | 950 mA | — |
| P-Channel Continuous Drain Current (ID) | 530 mA (negative polarity) | — |
| Total Power Dissipation (Ptot) | 500 mW | — |
| Package Type | PG-SOT363-6-1 (SOT-363, 6-pin) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | OptiMOS™ low-voltage | SIPMOS (N-channel MOSFET with control IC) |
| 工作温度范围 | -55 °C to +150 °C (junction) | -40C to +150C |
| Polarity | N-channel + P-channel | — |
| Channel Mode | Enhancement | — |
| RoHS 状态 | Compliant (lead-free) | Compliant |
| MSL 等级 | 1 | 3 (per JEDEC J-STD-020, typical for DPAK) |
| 引脚数量 | 6 | 5 |
| Part Number | — | BTS6133DAUMA1 |
| Product Type | — | Smart High-Side Power Switch |
| Switch Configuration | — | 1:1 (single high-side) |
| 输出数量 | — | 1 |
| Peak Drain Current | — | 41 A |
| Continuous Load Current | — | 8 A |
| Operating Voltage Range | — | [DATA_NEEDED: VBB operating range] |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at 25C] |
| 封装 | — | PG-TO252-5-11 (DPAK-5) |
| Protection Features | — | Over-temperature, short-circuit, overload, under-voltage, over-voltage, current limitation |
| Diagnostic Feedback | — | Yes (status / fault pin) |
| AEC-Q100 Qualified | — | AEC-Q100 qualified (automotive grade) |
| Datasheet Document Size | — | 257 Kbytes (15 pages) |