BSL308CH6327XTSA1 vs BSP92PH6327XTSA1 对比

详细并排对比 BSL308CH6327XTSA1 出自 Infineon 和 BSP92PH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSL308CH6327XTSA1 BSL308CH6327XTSA1 - 30V 2.3A Dual N/P MOSFET Array | Infineon

BSL308CH6327XTSA1 - 30V 2.3A Dual N/P MOSFET Array | Infineon

BSL308CH6327XTSA1 ✓ 量产中

规格对比

参数 BSL308CH6327XTSA1 BSP92PH6327XTSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.21 $0.31
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™ low-voltage power MOSFETs OptiMOS P-Channel Small-Signal Power MOSFET
Configuration Complementary dual MOSFET (1 N-channel + 1 P-channel) —
封装 PG-TSOP6-6 (TSOP-6, 6 pins) PG-SOT223-4 (SOT-223-4)
Drain-to-Source Voltage (VDS) 30 V —
Continuous Drain Current - N-channel (ID, N-ch) 2.3 A —
Continuous Drain Current - P-channel (ID, P-ch) 2 A —
Total Power Dissipation (Ptot) 500 mW —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] [DATA_NEEDED: VGS(th) typical and min/max]
On-State Resistance N-channel (RDS(on) @ VGS=10V) [DATA_NEEDED: RDS(on) N-ch] —
On-State Resistance P-channel (RDS(on) @ VGS=10V) [DATA_NEEDED: RDS(on) P-ch] —
Total Gate Charge (Qg) 5 nC @ 10 V —
Input Capacitance (Ciss) 18 pF —
工作温度范围 -55 °C to +150 °C —
安装类型 Surface Mount Surface Mount
MSL 等级 1 (per JEDEC J-STD-020) 1 (unlimited)
Automotive Qualified Yes (per Infineon part-number suffix, automotive grade) —
RoHS 状态 Compliant —
Lead-Free Yes —
无卤 Yes (per Infineon product family convention) —
晶体管类型 — P-Channel Enhancement Mode MOSFET
Drain-Source Voltage (VDS) — -250 V
Continuous Drain Current (ID) — -260 mA (Ta)
Power Dissipation (PD) — 1.8 W (Ta)
Channel Polarity — P-Channel
工作温度 — -55C to +150C (Tj)
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=-10V]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Lead-Free / RoHS — Yes / Compliant
引脚数量 — 4 (Gate, Drain, Drain, Source)

数据手册与资源

浏览全部产品 创建 BOM 获取报价