BSL308CH6327XTSA1 vs BSP92PH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSL308CH6327XTSA1 von Infineon und BSP92PH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSL308CH6327XTSA1 | BSP92PH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,21 | $0,31 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™ low-voltage power MOSFETs | OptiMOS P-Channel Small-Signal Power MOSFET |
| Configuration | Complementary dual MOSFET (1 N-channel + 1 P-channel) | — |
| Gehäuse | PG-TSOP6-6 (TSOP-6, 6 pins) | PG-SOT223-4 (SOT-223-4) |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current - N-channel (ID, N-ch) | 2.3 A | — |
| Continuous Drain Current - P-channel (ID, P-ch) | 2 A | — |
| Total Power Dissipation (Ptot) | 500 mW | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typical and min/max] |
| On-State Resistance N-channel (RDS(on) @ VGS=10V) | [DATA_NEEDED: RDS(on) N-ch] | — |
| On-State Resistance P-channel (RDS(on) @ VGS=10V) | [DATA_NEEDED: RDS(on) P-ch] | — |
| Total Gate Charge (Qg) | 5 nC @ 10 V | — |
| Input Capacitance (Ciss) | 18 pF | — |
| Betriebstemperaturbereich | -55 °C to +150 °C | — |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 (unlimited) |
| Automotive Qualified | Yes (per Infineon part-number suffix, automotive grade) | — |
| RoHS-Status | Compliant | — |
| Lead-Free | Yes | — |
| Halogenfrei | Yes (per Infineon product family convention) | — |
| Transistortyp | — | P-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDS) | — | -250 V |
| Continuous Drain Current (ID) | — | -260 mA (Ta) |
| Power Dissipation (PD) | — | 1.8 W (Ta) |
| Channel Polarity | — | P-Channel |
| Betriebstemperatur | — | -55C to +150C (Tj) |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=-10V] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Lead-Free / RoHS | — | Yes / Compliant |
| Pin-Anzahl | — | 4 (Gate, Drain, Drain, Source) |