BSP295H6327XTSA1 vs BSL606SNH6327XTSA1 对比
详细并排对比 BSP295H6327XTSA1 出自 Infineon 和 BSL606SNH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSP295H6327XTSA1 | BSL606SNH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.35 | $0.19 |
| 晶体管类型 | N-Channel MOSFET | N-Channel MOSFET (Enhancement Mode) |
| Drain-Source Voltage (VDS) max | 60 V | — |
| Continuous Drain Current (ID) at Ta=25 °C | 1.8 A | — |
| Power Dissipation (PD) at Ta=25 °C | 1.8 W | — |
| Drain-Source On-Resistance RDS(on) max | 300 mΩ | — |
| 封装 | PG-SOT223-4 (3 leads + tab) | PG-TSOP6-6 (6-pin, SOT-23-6 compatible) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55 °C to +150 °C | -55C to +150C (Tj) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: VGS(th) typical/min] |
| Qualification | AEC-Q101 (Automotive) | AEC-Q101 (Automotive) |
| RoHS 状态 | Compliant | Compliant (Pb-free plating) |
| Tape and Reel Packing Code | H6327 (7-inch reel) | — |
| Channel Mode | Enhancement | — |
| Technology | Planar N-channel MOSFET | OptiMOS3 trench MOSFET |
| Drain Tab Connection | Pin 4 (tab) | — |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Ta | — | 4.5 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 60 mOhm (max, VGS = 10 V) |
| Total Power Dissipation (PD) at Ta | — | 2 W |
| Gate-Source Voltage (VGS) | — | +/-20 V (max) |
| Total Gate Charge (Qg) | — | 5.6 nC (max) |
| MSL 等级 | — | 1 (per JEDEC J-STD-020) |