BSP295H6327XTSA1 vs BSL606SNH6327XTSA1 Comparison
Detailed side-by-side comparison of BSP295H6327XTSA1 by Infineon and BSL606SNH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSP295H6327XTSA1 | BSL606SNH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET (Enhancement Mode) |
| Drain-Source Voltage (VDS) max | 60 V | — |
| Continuous Drain Current (ID) at Ta=25 °C | 1.8 A | — |
| Power Dissipation (PD) at Ta=25 °C | 1.8 W | — |
| Drain-Source On-Resistance RDS(on) max | 300 mΩ | — |
| Package | PG-SOT223-4 (3 leads + tab) | PG-TSOP6-6 (6-pin, SOT-23-6 compatible) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 °C to +150 °C | -55C to +150C (Tj) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: VGS(th) typical/min] |
| Qualification | AEC-Q101 (Automotive) | AEC-Q101 (Automotive) |
| RoHS Status | Compliant | Compliant (Pb-free plating) |
| Tape and Reel Packing Code | H6327 (7-inch reel) | — |
| Channel Mode | Enhancement | — |
| Technology | Planar N-channel MOSFET | OptiMOS3 trench MOSFET |
| Drain Tab Connection | Pin 4 (tab) | — |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Ta | — | 4.5 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 60 mOhm (max, VGS = 10 V) |
| Total Power Dissipation (PD) at Ta | — | 2 W |
| Gate-Source Voltage (VGS) | — | +/-20 V (max) |
| Total Gate Charge (Qg) | — | 5.6 nC (max) |
| MSL Level | — | 1 (per JEDEC J-STD-020) |