BSP315PH6327XTSA1 vs BSL308PEH6327XTSA1 对比

详细并排对比 BSP315PH6327XTSA1 出自 Infineon 和 BSL308PEH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSP315PH6327XTSA1 BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 ✓ 量产中
Infineon
BSL308PEH6327XTSA1 BSL308PEH6327XTSA1 - 30V 2A Dual P-Ch MOSFET | Infineon

BSL308PEH6327XTSA1 - 30V 2A Dual P-Ch MOSFET | Infineon

BSL308PEH6327XTSA1 ✓ 量产中

规格对比

参数 BSP315PH6327XTSA1 BSL308PEH6327XTSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.31 $0.21
FET Type P-Channel 2x P-Channel (Dual)
Technology OptiMOS (enhancement mode) —
Drain-Source Voltage (VDS) -60 V -30 V
Continuous Drain Current (ID) -1.17 A (Ta) -2 A (Ta)
Power Dissipation (PD) 1.8 W (Ta) 500 mW (Ta)
Gate-Source Voltage (VGS) ±20 V (max) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] [DATA_NEEDED: VGS(th) typical value]
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=-10 V] [DATA_NEEDED: RDS(on) at VGS=10V / 4.5V]
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
工作温度范围 -55 C to +150 C (junction) —
封装 PG-SOT223-4 (SOT-223-3 pinout with exposed tab) PG-TSOP6-6 (TSOT-23-6)
安装类型 Surface Mount Surface Mount
Avalanche Energy Rated Yes (per datasheet) —
Lead-Free / RoHS Yes / Compliant —
MSL 等级 1 (per JEDEC J-STD-020) —
Manufacturer — Infineon Technologies
Series — OptiMOS
Configuration — Dual, common source
工作温度 — -55 C to +150 C (TJ)
Automotive Qualification — AEC-Q101
引脚数 — 6
Channel Mode — Enhancement
RoHS 状态 — Compliant

数据手册与资源

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