BSP316PH6327XTSA1 vs BSD235CH6327XTSA1 对比
详细并排对比 BSP316PH6327XTSA1 出自 Infineon 和 BSD235CH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
BSD235CH6327XTSA1 - 20V Complementary N+P MOSFET | Infineon OptiMOS™
BSD235CH6327XTSA1 ✓ 量产中规格对比
| 参数 | BSP316PH6327XTSA1 | BSD235CH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.21 | $0.12 |
| FET Type | P-Channel | — |
| Drain-to-Source Voltage (VDS) | -100 V | 20 V |
| Continuous Drain Current (ID) at TA=25C | -680 mA | — |
| Total Power Dissipation (Ptot) at TA=25C | 1.8 W | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=-10V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| 封装 | PG-SOT223-4 (TO-261-4) | — |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55 C to +150 C (junction) | -55 °C to +150 °C (junction) |
| 引脚数 | 3 + thermal tab | — |
| Channel Mode | Enhancement | Enhancement |
| Technology | SIPMOS (P-channel MOSFET) | OptiMOS™ low-voltage |
| RoHS 状态 | Compliant | Compliant (lead-free) |
| MSL 等级 | 1 | 1 |
| Packaging | Tape & Reel (H6327 suffix) | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS™ |
| Configuration | — | N+P complementary dual MOSFET |
| N-Channel Continuous Drain Current (ID) | — | 950 mA |
| P-Channel Continuous Drain Current (ID) | — | 530 mA (negative polarity) |
| Total Power Dissipation (Ptot) | — | 500 mW |
| Package Type | — | PG-SOT363-6-1 (SOT-363, 6-pin) |
| Polarity | — | N-channel + P-channel |
| 引脚数量 | — | 6 |