BSP316PH6327XTSA1 vs BSD235CH6327XTSA1 Comparison

Detailed side-by-side comparison of BSP316PH6327XTSA1 by Infineon and BSD235CH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSP316PH6327XTSA1 BSP316PH6327XTSA1 - P-Ch 100V 680mA MOSFET | Infineon | SOT-223

BSP316PH6327XTSA1 - P-Ch 100V 680mA MOSFET | Infineon | SOT-223

BSP316PH6327XTSA1 βœ“ Active
Infineon
BSD235CH6327XTSA1

BSD235CH6327XTSA1 - 20V Complementary N+P MOSFET | Infineon OptiMOSβ„’

BSD235CH6327XTSA1 βœ“ Active

Specification Comparison

Parameter BSP316PH6327XTSA1 BSD235CH6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.21 $0.12
FET Type P-Channel β€”
Drain-to-Source Voltage (VDS) -100 V 20 V
Continuous Drain Current (ID) at TA=25C -680 mA β€”
Total Power Dissipation (Ptot) at TA=25C 1.8 W β€”
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=-10V] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] β€”
Gate Charge (Qg) [DATA_NEEDED: total gate charge] β€”
Package PG-SOT223-4 (TO-261-4) β€”
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 C to +150 C (junction) -55 Β°C to +150 Β°C (junction)
Number of Pins 3 + thermal tab β€”
Channel Mode Enhancement Enhancement
Technology SIPMOS (P-channel MOSFET) OptiMOSβ„’ low-voltage
RoHS Status Compliant Compliant (lead-free)
MSL Level 1 1
Packaging Tape & Reel (H6327 suffix) β€”
Manufacturer β€” Infineon Technologies
Part Family β€” OptiMOSβ„’
Configuration β€” N+P complementary dual MOSFET
N-Channel Continuous Drain Current (ID) β€” 950 mA
P-Channel Continuous Drain Current (ID) β€” 530 mA (negative polarity)
Total Power Dissipation (Ptot) β€” 500 mW
Package Type β€” PG-SOT363-6-1 (SOT-363, 6-pin)
Polarity β€” N-channel + P-channel
Pin Count β€” 6

Datasheets & Resources

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