BSP316PH6327XTSA1 vs BSD235CH6327XTSA1 Comparison
Detailed side-by-side comparison of BSP316PH6327XTSA1 by Infineon and BSD235CH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSD235CH6327XTSA1 - 20V Complementary N+P MOSFET | Infineon OptiMOS™
BSD235CH6327XTSA1 ✓ ActiveSpecification Comparison
| Parameter | BSP316PH6327XTSA1 | BSD235CH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| FET Type | P-Channel | — |
| Drain-to-Source Voltage (VDS) | -100 V | 20 V |
| Continuous Drain Current (ID) at TA=25C | -680 mA | — |
| Total Power Dissipation (Ptot) at TA=25C | 1.8 W | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=-10V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Package | PG-SOT223-4 (TO-261-4) | — |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +150 C (junction) | -55 °C to +150 °C (junction) |
| Number of Pins | 3 + thermal tab | — |
| Channel Mode | Enhancement | Enhancement |
| Technology | SIPMOS (P-channel MOSFET) | OptiMOS™ low-voltage |
| RoHS Status | Compliant | Compliant (lead-free) |
| MSL Level | 1 | 1 |
| Packaging | Tape & Reel (H6327 suffix) | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS™ |
| Configuration | — | N+P complementary dual MOSFET |
| N-Channel Continuous Drain Current (ID) | — | 950 mA |
| P-Channel Continuous Drain Current (ID) | — | 530 mA (negative polarity) |
| Total Power Dissipation (Ptot) | — | 500 mW |
| Package Type | — | PG-SOT363-6-1 (SOT-363, 6-pin) |
| Polarity | — | N-channel + P-channel |
| Pin Count | — | 6 |