BSP92PH6327XTSA1 vs BSL308CH6327XTSA1 对比

详细并排对比 BSP92PH6327XTSA1 出自 Infineon 和 BSL308CH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSL308CH6327XTSA1 BSL308CH6327XTSA1 - 30V 2.3A Dual N/P MOSFET Array | Infineon

BSL308CH6327XTSA1 - 30V 2.3A Dual N/P MOSFET Array | Infineon

BSL308CH6327XTSA1 ✓ 量产中

规格对比

参数 BSP92PH6327XTSA1 BSL308CH6327XTSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.31 $0.21
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS P-Channel Small-Signal Power MOSFET OptiMOS™ low-voltage power MOSFETs
晶体管类型 P-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) -250 V —
Continuous Drain Current (ID) -260 mA (Ta) —
Power Dissipation (PD) 1.8 W (Ta) —
封装 PG-SOT223-4 (SOT-223-4) PG-TSOP6-6 (TSOP-6, 6 pins)
安装类型 Surface Mount Surface Mount
Channel Polarity P-Channel —
工作温度 -55C to +150C (Tj) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] [DATA_NEEDED: VGS(th) typical value]
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=-10V] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Lead-Free / RoHS Yes / Compliant —
MSL 等级 1 (unlimited) 1 (per JEDEC J-STD-020)
引脚数量 4 (Gate, Drain, Drain, Source) —
Configuration — Complementary dual MOSFET (1 N-channel + 1 P-channel)
Drain-to-Source Voltage (VDS) — 30 V
Continuous Drain Current - N-channel (ID, N-ch) — 2.3 A
Continuous Drain Current - P-channel (ID, P-ch) — 2 A
Total Power Dissipation (Ptot) — 500 mW
On-State Resistance N-channel (RDS(on) @ VGS=10V) — [DATA_NEEDED: RDS(on) N-ch]
On-State Resistance P-channel (RDS(on) @ VGS=10V) — [DATA_NEEDED: RDS(on) P-ch]
Total Gate Charge (Qg) — 5 nC @ 10 V
Input Capacitance (Ciss) — 18 pF
工作温度范围 — -55 °C to +150 °C
Automotive Qualified — Yes (per Infineon part-number suffix, automotive grade)
RoHS 状态 — Compliant
Lead-Free — Yes
无卤 — Yes (per Infineon product family convention)

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