BSP92PH6327XTSA1 vs BSL308CH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSP92PH6327XTSA1 von Infineon und BSL308CH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSP92PH6327XTSA1 | BSL308CH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,31 | $0,21 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS P-Channel Small-Signal Power MOSFET | OptiMOS™ low-voltage power MOSFETs |
| Transistortyp | P-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDS) | -250 V | — |
| Continuous Drain Current (ID) | -260 mA (Ta) | — |
| Power Dissipation (PD) | 1.8 W (Ta) | — |
| Gehäuse | PG-SOT223-4 (SOT-223-4) | PG-TSOP6-6 (TSOP-6, 6 pins) |
| Montageart | Surface Mount | Surface Mount |
| Channel Polarity | P-Channel | — |
| Betriebstemperatur | -55C to +150C (Tj) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=-10V] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Lead-Free / RoHS | Yes / Compliant | — |
| MSL-Level | 1 (unlimited) | 1 (per JEDEC J-STD-020) |
| Pin-Anzahl | 4 (Gate, Drain, Drain, Source) | — |
| Configuration | — | Complementary dual MOSFET (1 N-channel + 1 P-channel) |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current - N-channel (ID, N-ch) | — | 2.3 A |
| Continuous Drain Current - P-channel (ID, P-ch) | — | 2 A |
| Total Power Dissipation (Ptot) | — | 500 mW |
| On-State Resistance N-channel (RDS(on) @ VGS=10V) | — | [DATA_NEEDED: RDS(on) N-ch] |
| On-State Resistance P-channel (RDS(on) @ VGS=10V) | — | [DATA_NEEDED: RDS(on) P-ch] |
| Total Gate Charge (Qg) | — | 5 nC @ 10 V |
| Input Capacitance (Ciss) | — | 18 pF |
| Betriebstemperaturbereich | — | -55 °C to +150 °C |
| Automotive Qualified | — | Yes (per Infineon part-number suffix, automotive grade) |
| RoHS-Status | — | Compliant |
| Lead-Free | — | Yes |
| Halogenfrei | — | Yes (per Infineon product family convention) |