BSR316PH6327XTSA1 vs BSP92PH6327XTSA1 对比

详细并排对比 BSR316PH6327XTSA1 出自 Infineon 和 BSP92PH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSR316PH6327XTSA1 BSR316PH6327XTSA1 - 100V P-Ch MOSFET 360mA SC-59 | Infineon

BSR316PH6327XTSA1 - 100V P-Ch MOSFET 360mA SC-59 | Infineon

BSR316PH6327XTSA1 ✓ 量产中

规格对比

参数 BSR316PH6327XTSA1 BSP92PH6327XTSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.22 $0.31
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSR316PH6327XTSA1 —
Series OptiMOS —
FET Type P-Channel Enhancement Mode —
Drain-Source Voltage (VDS) -100 V -250 V
Continuous Drain Current (ID) at TA -360 mA —
Continuous Drain Current (ID) at TC [DATA_NEEDED: ID at TC specific value] —
On-State Resistance RDS(on) max 1800 mOhm at VGS = -10 V —
Gate Threshold Voltage VGS(th) -1.7 V typical, -2.5 V max —
Gate Charge Qg [DATA_NEEDED: Qg total] —
Power Dissipation (Tc) 500 mW —
封装 PG-SC59-3 (SC-59 / SOT-23 equivalent) PG-SOT223-4 (SOT-223-4)
安装类型 Surface Mount Surface Mount
工作温度范围 -55 C to +150 C (junction) —
Qualification Automotive —
RoHS 状态 Compliant —
MSL 等级 1 1 (unlimited)
Polarity P-Channel —
Product Family — OptiMOS P-Channel Small-Signal Power MOSFET
晶体管类型 — P-Channel Enhancement Mode MOSFET
Continuous Drain Current (ID) — -260 mA (Ta)
Power Dissipation (PD) — 1.8 W (Ta)
Channel Polarity — P-Channel
工作温度 — -55C to +150C (Tj)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max]
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=-10V]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Lead-Free / RoHS — Yes / Compliant
引脚数量 — 4 (Gate, Drain, Drain, Source)

数据手册与资源

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