BSS127H6327XTSA2 vs BSS126H6327XTSA2 对比

详细并排对比 BSS127H6327XTSA2 出自 Infineon 和 BSS126H6327XTSA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSS127H6327XTSA2 BSS127H6327XTSA2 - 600V N-Ch MOSFET, 21mA, SOT-23 | Infineon

BSS127H6327XTSA2 - 600V N-Ch MOSFET, 21mA, SOT-23 | Infineon

BSS127H6327XTSA2 ✓ 量产中
Infineon
BSS126H6327XTSA2 BSS126H6327XTSA2 - 600V N-Ch Depletion MOSFET SOT-23 | Infineon

BSS126H6327XTSA2 - 600V N-Ch Depletion MOSFET SOT-23 | Infineon

BSS126H6327XTSA2 ✓ 量产中

规格对比

参数 BSS127H6327XTSA2 BSS126H6327XTSA2
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.03 $0.32
FET Type N-Channel SIPMOS, enhancement mode N-Channel Depletion Mode
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID) 21 mA (Ta) —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed ID limit] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 4.5 V (logic level, rated) —
On-State Resistance (RDS(on)) max 500 ohm at ID = 21 mA —
Total Power Dissipation (Ptot) 500 mW (Ta) —
工作结温 -55 C to +150 C —
封装 SOT-23-3 (PG-SOT23) SOT-23-3 (PG-SOT23)
安装类型 Surface Mount Surface Mount
引脚数量 3 3
dv/dt Rated Yes —
Automotive Qualification AEC-Q101 —
RoHS 状态 Compliant (lead-free) Compliant
无卤 Yes, per IEC 61249-2-21 Yes (Infineon 'green' package)
MSL 等级 [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Drain-Source Voltage (VDS) Max — 600 V
Continuous Drain Current (ID) at Ta — 21 mA
Power Dissipation (PD) at Ta — 500 mW
On-Resistance (RDS(on)) Max — 500 ohm (typical for depletion-mode)
Gate-Source Voltage (VGS) Range — [DATA_NEEDED: VGS max/min]
Technology — SIPMOS (DMOS)
工作温度范围 — -55C to +150C (junction, typical)
Configuration — Single
Channel Mode — Depletion (normally-on at VGS = 0)
Lead-Free — Yes

数据手册与资源

浏览全部产品 创建 BOM 获取报价