BSS214NWH6327XTSA1 vs BSP295H6327XTSA1 对比

详细并排对比 BSS214NWH6327XTSA1 出自 Infineon 和 BSP295H6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSS214NWH6327XTSA1 BSS214NWH6327XTSA1 - 20V N-Ch 1.5A MOSFET SOT-323 | Infineon

BSS214NWH6327XTSA1 - 20V N-Ch 1.5A MOSFET SOT-323 | Infineon

BSS214NWH6327XTSA1 ✓ 量产中
Infineon
BSP295H6327XTSA1 BSP295H6327XTSA1 - 60V 1.8A N-Ch MOSFET SOT-223 | Infineon

BSP295H6327XTSA1 - 60V 1.8A N-Ch MOSFET SOT-223 | Infineon

BSP295H6327XTSA1 ✓ 量产中

规格对比

参数 BSS214NWH6327XTSA1 BSP295H6327XTSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.15 $0.35
Manufacturer Infineon Technologies —
Part Number BSS214NWH6327XTSA1 —
Series OptiMOS —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) Planar N-channel MOSFET
Drain-to-Source Voltage (Vdss) 20 V —
Continuous Drain Current (Id) @ 25C 1.5 A —
Rds(on) Max @ Vgs=4.5V 250 mOhm —
Drive Voltage (Max Rds On, Min Rds On) 2.5 V, 4.5 V —
Power Dissipation (Pd) @ Ta=25C 500 mW —
封装 PG-SOT323 (SOT-323-3) PG-SOT223-4 (3 leads + tab)
安装类型 Surface Mount Surface Mount
工作温度 -55C to +150C (junction) —
Qualification AEC-Q101 (Automotive) AEC-Q101 (Automotive)
RoHS 状态 Compliant Compliant
Lead-Free Yes —
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (VDS) max — 60 V
Continuous Drain Current (ID) at Ta=25 °C — 1.8 A
Power Dissipation (PD) at Ta=25 °C — 1.8 W
Drain-Source On-Resistance RDS(on) max — 300 mΩ
工作温度范围 — -55 °C to +150 °C
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Tape and Reel Packing Code — H6327 (7-inch reel)
Channel Mode — Enhancement
Drain Tab Connection — Pin 4 (tab)

数据手册与资源

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