BSS214NWH6327XTSA1 vs BSP295H6327XTSA1 Comparison

Detailed side-by-side comparison of BSS214NWH6327XTSA1 by Infineon and BSP295H6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSS214NWH6327XTSA1 BSS214NWH6327XTSA1 - 20V N-Ch 1.5A MOSFET SOT-323 | Infineon

BSS214NWH6327XTSA1 - 20V N-Ch 1.5A MOSFET SOT-323 | Infineon

BSS214NWH6327XTSA1 βœ“ Active
Infineon
BSP295H6327XTSA1

BSP295H6327XTSA1 - 60V 1.8A N-Ch MOSFET SOT-223 | Infineon

BSP295H6327XTSA1 βœ“ Active

Specification Comparison

Parameter BSS214NWH6327XTSA1 BSP295H6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.15 $0.35
Manufacturer Infineon Technologies β€”
Part Number BSS214NWH6327XTSA1 β€”
Series OptiMOS β€”
FET Type N-Channel β€”
Technology MOSFET (Metal Oxide) Planar N-channel MOSFET
Drain-to-Source Voltage (Vdss) 20 V β€”
Continuous Drain Current (Id) @ 25C 1.5 A β€”
Rds(on) Max @ Vgs=4.5V 250 mOhm β€”
Drive Voltage (Max Rds On, Min Rds On) 2.5 V, 4.5 V β€”
Power Dissipation (Pd) @ Ta=25C 500 mW β€”
Package PG-SOT323 (SOT-323-3) PG-SOT223-4 (3 leads + tab)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55C to +150C (junction) β€”
Qualification AEC-Q101 (Automotive) AEC-Q101 (Automotive)
RoHS Status Compliant Compliant
Lead-Free Yes β€”
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (VDS) max β€” 60 V
Continuous Drain Current (ID) at Ta=25 Β°C β€” 1.8 A
Power Dissipation (PD) at Ta=25 Β°C β€” 1.8 W
Drain-Source On-Resistance RDS(on) max β€” 300 mΞ©
Operating Temperature Range β€” -55 Β°C to +150 Β°C
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical/min/max]
Tape and Reel Packing Code β€” H6327 (7-inch reel)
Channel Mode β€” Enhancement
Drain Tab Connection β€” Pin 4 (tab)

Datasheets & Resources

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