BSS306NH6327XTSA1 vs 2N7002H6327XTSA2 对比

详细并排对比 BSS306NH6327XTSA1 出自 Infineon 和 2N7002H6327XTSA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSS306NH6327XTSA1 BSS306NH6327XTSA1 - 30V 2.3A N-Ch OptiMOS MOSFET | Infineon

BSS306NH6327XTSA1 - 30V 2.3A N-Ch OptiMOS MOSFET | Infineon

BSS306NH6327XTSA1 ✓ 量产中
Infineon
2N7002H6327XTSA2 2N7002H6327XTSA2 - 60V N-Ch OptiMOS MOSFET SOT-23 | Infineon

2N7002H6327XTSA2 - 60V N-Ch OptiMOS MOSFET SOT-23 | Infineon

2N7002H6327XTSA2 ✓ 量产中

规格对比

参数 BSS306NH6327XTSA1 2N7002H6327XTSA2
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.14 $0.08
Manufacturer Infineon Technologies —
Part Number BSS306NH6327XTSA1 —
Part Family BSS306N (OptiMOS Small Signal) —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) OptiMOS (Planar)
Drain-Source Voltage (VDS) 30 V 60 V
Continuous Drain Current (ID) 2.3 A (Ta) 300 mA (Ta)
Power Dissipation (PD) 500 mW (Ta) 500 mW (Ta)
RDS(on) max [DATA_NEEDED: exact RDS(on) max value in mΩ] —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max in V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) in V] [DATA_NEEDED: VGS(th) typical value]
封装 SOT-23 (PG-SOT23), 3-pin PG-SOT23 (SOT-23-3)
安装类型 Surface Mount Surface Mount
工作温度 -55°C to +150°C (TJ) —
Qualification AEC-Q101 (Automotive) Industrial / Commercial Grade
Lead Plating Pb-free (RoHS compliant) —
Configuration Single N-Channel, 3-pin —
晶体管类型 — N-Channel MOSFET
On-State Resistance (RDS(on)) — 3 ohm max @ VGS = 10 V
Gate Charge (Qg) — [DATA_NEEDED: Qg total]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
工作温度范围 — -55C to +150C (Tj)
Channel Mode — Enhancement
MSL 等级 — 1 (per JEDEC J-STD-020)
RoHS 状态 — Compliant
Lead-Free — Yes

数据手册与资源

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