BSS308PEH6327XTSA1 vs BSL207SPH6327XTSA1 对比

详细并排对比 BSS308PEH6327XTSA1 出自 Infineon 和 BSL207SPH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSL207SPH6327XTSA1 BSL207SPH6327XTSA1 - P-CH 20V 6A OptiMOS MOSFET | Infineon

BSL207SPH6327XTSA1 - P-CH 20V 6A OptiMOS MOSFET | Infineon

BSL207SPH6327XTSA1 ✓ 量产中

规格对比

参数 BSS308PEH6327XTSA1 BSL207SPH6327XTSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.11 $0.33
Manufacturer Infineon Technologies —
Part Family OptiMOS P (small signal / small power MOSFET) —
晶体管类型 P-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID) -2 A (Ta) —
RDS(on) Max 80 mΩ at VGS = -10 V —
Gate-Source Voltage (VGS) Max +/-20 V —
Power Dissipation (PD) 500 mW (Ta) 2 W (Ta)
工作温度范围 -55 °C to +150 °C —
封装 / 外壳 PG-SOT23 (SOT-23-3) —
安装类型 Surface Mount Surface Mount
引脚数 3 —
Qualification AEC-Q101 Automotive —
RoHS 状态 Compliant Compliant
Packaging Tape & Reel (T/R) —
Standard Reel Quantity 3000 pcs —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] [DATA_NEEDED: VGS(th) typical]
FET Type — P-Channel
Technology — MOSFET (Metal Oxide)
Drain to Source Voltage (VDS) — -20 V
Continuous Drain Current (ID) at 25C — 6 A (Ta)
RDS(on) Max @ VGS = -4.5 V — [DATA_NEEDED: RDS(on) max @ VGS=-4.5V]
RDS(on) Max @ VGS = -2.5 V — [DATA_NEEDED: RDS(on) max @ VGS=-2.5V]
Drive Voltage (Max RDS(on), Min RDS(on)) — 2.5 V, 4.5 V
封装 — TSOP-6 (PG-TSOP6-6)
工作温度 — -55C to +150C
Series — OptiMOS™
Automotive Qualification — AEC-Q101
引脚数量 — 6

数据手册与资源

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