BSS308PEH6327XTSA1 vs BSS214NH6327XTSA1 对比

详细并排对比 BSS308PEH6327XTSA1 出自 Infineon 和 BSS214NH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSS214NH6327XTSA1 BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 ✓ 量产中

规格对比

参数 BSS308PEH6327XTSA1 BSS214NH6327XTSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.11 $0.09
Manufacturer Infineon Technologies —
Part Family OptiMOS P (small signal / small power MOSFET) —
晶体管类型 P-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) -30 V 20 V
Continuous Drain Current (ID) -2 A (Ta) 1.5 A (Ta)
RDS(on) Max 80 mΩ at VGS = -10 V —
Gate-Source Voltage (VGS) Max +/-20 V —
Power Dissipation (PD) 500 mW (Ta) 500 mW (Ta)
工作温度范围 -55 °C to +150 °C -55C to +150C (junction)
封装 / 外壳 PG-SOT23 (SOT-23-3) —
安装类型 Surface Mount Surface Mount
引脚数 3 —
Qualification AEC-Q101 Automotive AEC-Q101 (Automotive)
RoHS 状态 Compliant Compliant
Packaging Tape & Reel (T/R) —
Standard Reel Quantity 3000 pcs —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
FET Type — N-Channel
Drain-Source On-Resistance (RDS(on) max) — 250 mOhm at VGS = 4.5 V
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max values]
Gate-Source Voltage (VGS max) — ±12 V (recommended)
Technology — OptiMOS 2 (planar N-channel)
封装 — SOT-23 (PG-SOT23), 3 pins
Lead Finish — Pb-free lead plating (matte tin)
MSL 等级 — 1 (per JEDEC J-STD-020)
ESD Protection — Yes (gate ESD diode)

数据手册与资源

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