BSZ011NE2LS5IATMA1 vs BSC015NE2LS5IATMA1 对比

详细并排对比 BSZ011NE2LS5IATMA1 出自 Infineon 和 BSC015NE2LS5IATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSZ011NE2LS5IATMA1 BSZ011NE2LS5IATMA1 - 25V 1.1mΩ OptiMOS 5 N-MOSFET | Infineon

BSZ011NE2LS5IATMA1 - 25V 1.1mΩ OptiMOS 5 N-MOSFET | Infineon

BSZ011NE2LS5IATMA1 ✓ 量产中
Infineon
BSC015NE2LS5IATMA1 BSC015NE2LS5IATMA1 - 25V OptiMOS 5 N-Channel MOSFET | Infineon

BSC015NE2LS5IATMA1 - 25V OptiMOS 5 N-Channel MOSFET | Infineon

BSC015NE2LS5IATMA1 ✓ 量产中

规格对比

参数 BSZ011NE2LS5IATMA1 BSC015NE2LS5IATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.55 $0.69
FET Type N-Channel —
Technology OptiMOS 5 (Trench) OptiMOS 5 trench
Drain-Source Voltage (VDS) 25 V —
Continuous Drain Current (ID) at TA=25°C 35 A —
Continuous Drain Current (ID) at TC=25°C 40 A —
On-State Resistance RDS(on) max at VGS=10 V 1.1 mΩ (typical, per datasheet title) —
Power Dissipation at TA=25°C 2.1 W —
Power Dissipation at TC=25°C 69 W —
Gate Threshold Voltage VGS(th) 1.0 V to 2.0 V (typical 1.5 V) —
Gate Drive Voltage (recommended) 4.5 V to 10 V —
工作温度范围 -55°C to +150°C -55C to +150C (junction)
封装 PG-TSDSON-8-34 (PQFN 3.3x3.3 mm) PG-TDSON-8-6 (SuperSO8 5x6)
安装类型 Surface Mount Surface Mount
MSL 等级 MSL1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
RoHS 状态 Compliant Compliant
Lead-Free Yes —
无卤 Yes —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 5 25V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 25 V
Continuous Drain Current (ID) at Ta — 33 A
Continuous Drain Current (ID) at Tc — 100 A
On-Resistance RDS(on) Max at VGS=10V — 1.5 mOhm
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 50 W
引脚数量 — 8
Gate Threshold Voltage VGS(th) Typ — [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge Qg Typ — [DATA_NEEDED: Qg typical value]

数据手册与资源

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