BSZ065N03LSATMA1 vs BSZ130N03LSGATMA1 对比
详细并排对比 BSZ065N03LSATMA1 出自 Infineon 和 BSZ130N03LSGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSZ065N03LSATMA1 | BSZ130N03LSGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.38 | $0.41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 30V | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 12 A | — |
| Continuous Drain Current (ID) at TC=25C | 40 A | — |
| Power Dissipation (PD) at TA=25C | 2.1 W | — |
| Power Dissipation (PD) at TC=25C | 26 W | — |
| 封装 / 外壳 | PG-TSDSON-8-FL (S308) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | — |
| Technology | Trench MOSFET (OptiMOS) | — |
| 工作温度范围 | -55C to +150C (junction) | -55 C to +150 C (junction) |
| MSL 等级 | 1 | 1 (per JEDEC J-STD-020) |
| RoHS 状态 | Compliant | Compliant |
| Gate Drive (typical) | 4.5 V | — |
| Part Family | — | OptiMOS 25V / 30V |
| Polarity / Channel Type | — | N-Channel Enhancement Mode |
| Drain-Source Voltage (Vds) | — | 30 V |
| Continuous Drain Current (Ta=25 C) | — | 10 A |
| 连续漏极电流（TC=25°C） | — | 35 A |
| On-State Resistance Rds(on) max @ Vgs=10V | — | 13 mOhm |
| Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA | — | 2.2 V |
| Power Dissipation (Ta) | — | 2.1 W |
| Power Dissipation (Tc) | — | 25 W |
| 封装 | — | PG-TSDSON-8 (8-PowerTDFN, 5x6 mm) |
| Lead-Free | — | Yes |
| 无卤 | — | Yes |
| Qualification | — | Industrial / Commercial (non-automotive) |