BSZ065N03LSATMA1 vs IQDH35N03LM5CGATMA1 对比
详细并排对比 BSZ065N03LSATMA1 出自 Infineon 和 IQDH35N03LM5CGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IQDH35N03LM5CGATMA1 - 30V 700A 0.35mΩ N-Channel MOSFET | Infineon
IQDH35N03LM5CGATMA1 ✓ 量产中规格对比
| 参数 | BSZ065N03LSATMA1 | IQDH35N03LM5CGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.38 | $1.45 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 30V | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 12 A | — |
| Continuous Drain Current (ID) at TC=25C | 40 A | — |
| Power Dissipation (PD) at TA=25C | 2.1 W | — |
| Power Dissipation (PD) at TC=25C | 26 W | — |
| 封装 / 外壳 | PG-TSDSON-8-FL (S308) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | — |
| Technology | Trench MOSFET (OptiMOS) | OptiMOS 5 trench MOSFET |
| 工作温度范围 | -55C to +150C (junction) | -55 °C to +175 °C |
| MSL 等级 | 1 | 1 |
| RoHS 状态 | Compliant | Compliant |
| Gate Drive (typical) | 4.5 V | — |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta | — | 66 A |
| Pulsed Drain Current (IDM) at Tc | — | 700 A |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-to-Source On-Resistance (RDS(on)) | — | 0.35 mΩ (typical at VGS=10 V) |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 278 W |
| 封装 | — | PG-TTFN-9-U02 (PQFN 5x6 mm²) |
| 无卤 | — | Yes |
| Channel Type | — | N-Channel |