BSZ065N06LS5ATMA1 vs IPD380P06NMATMA1 对比

详细并排对比 BSZ065N06LS5ATMA1 出自 Infineon 和 IPD380P06NMATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSZ065N06LS5ATMA1 BSZ065N06LS5ATMA1 - 60V 65A OptiMOS 5 N-Ch MOSFET | Infineon

BSZ065N06LS5ATMA1 - 60V 65A OptiMOS 5 N-Ch MOSFET | Infineon

BSZ065N06LS5ATMA1 ✓ 量产中
Infineon
IPD380P06NMATMA1 IPD380P06NMATMA1 - 60V P-Ch MOSFET 35A OptiMOS | Infineon

IPD380P06NMATMA1 - 60V P-Ch MOSFET 35A OptiMOS | Infineon

IPD380P06NMATMA1 ✓ 量产中

规格对比

参数 BSZ065N06LS5ATMA1 IPD380P06NMATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.62 $0.49
Manufacturer Infineon Technologies —
Series OptiMOS™ 5 —
晶体管类型 N-Channel MOSFET —
Technology OptiMOS™ 5 logic-level OptiMOS P-channel trench
Drain-Source Voltage (VDS) Max 60 V —
Continuous Drain Current (ID) Max 65 A —
Drain Current @ Tc (ID, Tc=25°C) 40 A —
On-Resistance RDS(on) Max @ VGS=10V 6.5 mΩ —
Power Dissipation (PD) Max 46 W —
Gate Threshold Voltage (VGS(th)) 2.3 V —
Total Gate Charge (Qg) 13 nC @ VGS=4.5 V —
Input Capacitance (Ciss) 1.8 nF —
工作温度范围 -55°C to +150°C -55 C to +150 C (junction)
封装 PG-TSDSON-8-FL (PQFN 3.3 x 3.3) PG-TO252-3 (DPAK), surface mount
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant Compliant
Polarity / Channel Type — P-Channel
Drain-Source Voltage V(BR)DSS — 60 V
连续漏极电流(TC=25°C) — 35 A
Power Dissipation (Tc) — 125 W
Gate Drive — Logic-level compatible
Avalanche Rated — Yes (per manufacturer datasheet)
MSL 等级 — 1
Target Applications — Reverse-polarity protection, load switch, BMS, high-side switch
Lead-Free — Yes
Automotive Qualified — Not specified in provided data [DATA_NEEDED: AEC-Q100 grade]

数据手册与资源

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