E3AD8G16A4-HR vs MT40A512M16TB-062E 对比
详细并排对比 E3AD8G16A4-HR 出自 ELIXIR/NANYA 和 MT40A512M16TB-062E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | E3AD8G16A4-HR | MT40A512M16TB-062E |
|---|---|---|
| 品牌 | ELIXIR/NANYA | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $8.60 | $60.00 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储组织 | 512M x 16 | 512M x 16 |
| Density | 8 Gb | — |
| 电源电压 | 1.2 V | — |
| 封装 | TFBGA-96 | 96-FBGA (7.5x13 mm) |
| 数据速率 | 3200 MT/s | 1600 MHz (DDR4-3200) |
| CAS 延迟 | 22 | — |
| Burst Length | 8 (BC4 optional) | — |
| Number of Banks | 16 (4 bank groups) | — |
| Refresh | Auto-refresh and self-refresh | — |
| 工作温度 | 0C to +95C (TCASE) | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| 安装类型 | Surface Mount | Surface Mount |
| Speed Grade | DDR4-3200 | — |
| 存储容量 | — | 8 Gbit |
| Supply Voltage - VDD/VDDQ | — | 1.2V ±60mV |
| Supply Voltage - VPP | — | 2.5V, -125mV, +250mV |
| tRCD | — | 19 ns |
| Refresh Time | — | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C |
| 工作温度范围 | — | 0°C to +95°C (standard), -40°C to +95°C (IT) |
| 接口 | — | Parallel |
| 特性 | — | Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration |
| RoHS 状态 | — | Compliant |
| REACH Status | — | Compliant |