EDB1332BDBH-1DAUT-F-R vs EDB1332BDBH-1DAUT-F-D 对比

详细并排对比 EDB1332BDBH-1DAUT-F-R 出自 Micron Technology 和 EDB1332BDBH-1DAUT-F-D 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
EDB1332BDBH-1DAUT-F-R EDB1332BDBH-1DAUT-F-R - 1Gbit LPDDR2 SDRAM 533MHz | Micron

EDB1332BDBH-1DAUT-F-R - 1Gbit LPDDR2 SDRAM 533MHz | Micron

EDB1332BDBH-1DAUT-F-R ✓ 量产中
Micron Technology
EDB1332BDBH-1DAUT-F-D EDB1332BDBH-1DAUT-F-D - 1Gbit LPDDR2 533MHz | Micron

EDB1332BDBH-1DAUT-F-D - 1Gbit LPDDR2 533MHz | Micron

EDB1332BDBH-1DAUT-F-D ✓ 量产中

规格对比

参数 EDB1332BDBH-1DAUT-F-R EDB1332BDBH-1DAUT-F-D
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.40 $2.16
存储器类型 SDRAM Mobile - LPDDR2 SDRAM - Mobile LPDDR2
存储容量 1 Gbit 1 Gbit
存储组织 32M x 32 32M x 32
数据总线宽度 32 bit —
Clock Frequency 533 MHz 533 MHz
接口 Parallel Parallel
Supply Voltage - Min 1.14 V —
Supply Voltage - Typ 1.2 V —
Operating Temperature - Min -40 C —
Operating Temperature - Max +125 C —
封装 134-VFBGA (10 mm x 11.5 mm) 134-VFBGA (10 x 11.5 mm)
JEDEC Package Code R-PBGA-B134 —
安装方式 SMD/SMT —
Factory Pack Quantity 1000 —
Packaging Tape & Reel (-R suffix) —
Technology CMOS —
RoHS 状态 Compliant —
Core Supply Voltage — 1.2 V
Supply Voltage Range — 1.14 V to 1.95 V
Access Mode — Single Bank Page Burst
Number of Terminals — 134
安装类型 — Surface Mount
Temperature Grade — Automotive
Package Shape — Rectangular
Packaging Suffix — -D (Dry Pack)
Moisture Sensitivity — Dry Pack (per -D suffix)
工作温度 — [DATA_NEEDED: Operating Temperature]

数据手册与资源

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