H5AN4G8NBJR-UHC vs H5ANAG4NBJR-UHC 对比
详细并排对比 H5AN4G8NBJR-UHC 出自 SK hynix 和 H5ANAG4NBJR-UHC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN4G8NBJR-UHC | H5ANAG4NBJR-UHC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.18 | $8.09 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gbit |
| 存储组织 | 512M x 8 | 256M x16 |
| 数据速率 | 2400 Mbps (PC2400) | — |
| 电源电压 | 1.2 V | — |
| 接口 | DDR4 (JEDEC) | CMOS, DDR4 (double data rate) |
| 封装 | TFBGA-78 (11 x 7.5 mm) | FBGA-96 (PBGA96) |
| 安装类型 | Surface Mount | Surface Mount (BGA) |
| Technology | CMOS DRAM | — |
| Lifecycle Code | Active | — |
| RoHS 状态 | Compliant (Rohs Code: Yes) | Compliant |
| REACH Compliance | Compliant | — |
| Manufacturer | SK Hynix Inc. | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | -40C to +95C |
| CAS 延迟 | [DATA_NEEDED: CAS latency for -UHC speed bin] | [DATA_NEEDED: CAS Latency / speed bin detail] |
| Refresh | [DATA_NEEDED: refresh rate 1x/2x/4x support] | — |
| Supply Voltage (VDD) | — | 1.14 V to 1.26 V (nominal 1.2 V) |
| Clock / Data Rate | — | 1.6 GHz |
| Data Mask (DM) | — | Yes |
| Asynchronous Reset | — | Yes |
| On-Die Termination (ODT) | — | Dynamic ODT |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| Auto Self-Refresh | — | Yes |