H5ANAG4NBJR-UHC - 4Gb DDR4 SDRAM 1.6GHz FBGA-96 | SK hynix
料号： H5ANAG4NBJR-UHC ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $9.74 | $9.74 |
| 10 | $9.3 | $93.00 |
| 100 | $8.9 | $890.00 |
| 500 | $8.5 | $4,250.00 |
| 1,000 | $8.09 | $8,090.00 |
H5ANAG4NBJR-UHC 概述
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth-generation JEDEC-class DRAM technology that stores each bit as charge on a capacitor within a dense memory cell array. In the system memory hierarchy, the SDRAM sits below the memory controller in a CPU, FPGA, or SoC platform, providing the main working memory tier between caches and mass storage. The x16 organization means the device presents 16 data bits per access, which simplifies solderdown for embedded systems that do not need the full 64/72-bit server bus width.
Key features of the H5ANAG4NBJR family include automatic self-refresh for data retention in low-power states, a data mask (DM) function for partial writes, an asynchronous reset input for rapid state initialization, dynamic on-die termination (ODT) for signal-integrity tuning, ZQ calibration for output driver impedance accuracy, write leveling for fly-by topology timing, and CRC protection on critical buses. These functions collectively relax board-level timing margins and support reliable operation over the extended industrial temperature range.
Technically, the device operates from a nominal 1.2V VDD rail (1.14V to 1.26V tolerance), a significant reduction versus the 1.5V of DDR3, cutting dynamic I/O power. Internal banks are accessed through the DDR4 burst-oriented protocol, and the -UHC suffix denotes SK hynix speed/temperature grade coding; confirm the exact speed bin and CAS latency in the manufacturer datasheet for your controller configuration.
Typical applications include embedded controllers, industrial automation modules, networking equipment, FPGA-based processing cards, computing modules, and firmware/data logging systems that require a soldered-down, x16, extended-temperature DRAM.
Design consideration: DDR4 fly-by routing requires length-matched address/command traces, per-byte ODT tuning via ZQ calibration, and a clean 1.2V rail with adequate bulk and high-frequency decoupling; verify controller compatibility with the exact die revision.
This page synthesizes distributor pricing, drop-in same-family alternatives, and practical DDR4 design notes not found in the manufacturer datasheet.
直接替换替代料： H5ANAG4NBJR-UHC ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： H5ANAG4NBJR-UHC （相同外形与封装尺寸） ——差异在于 RoHS Status, Package, Density, Interface, Organization.
快速对比工具——选择替代料号进行并排对比：
H5ANAG4NBJR-RDC
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$5.75 / 个
查看数据手册 →H5ANAG4NBJR-PBC
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
联系询价
查看数据手册 →H5AN4G6NBJR-UHC
✅ 直接替换✓ 有现货
$8.09 / 个
查看数据手册 →H5ANAG6NBJR-UHC
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$8.09 / 个
查看数据手册 →H5ANAG8NBJR-UHC
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
H5AN4G8NBJR-UHC
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$3.18 / 个
查看数据手册 →H5ANAG4NBJR-UHC 规格参数
| 存储器类型 | DDR4 SDRAM |
| Density | 4 Gbit |
| 存储组织 | 256M x16 |
| Supply Voltage (VDD) | 1.14 V to 1.26 V (nominal 1.2 V) |
| Clock / Data Rate | 1.6 GHz |
| 封装 | FBGA-96 (PBGA96) |
| 工作温度 | -40C to +95C |
| 接口 | CMOS, DDR4 (double data rate) |
| Data Mask (DM) | Yes |
| Asynchronous Reset | Yes |
| On-Die Termination (ODT) | Dynamic ODT |
| ZQ Calibration | Yes |
| Write Leveling | Yes |
| CRC Function | Yes |
| Auto Self-Refresh | Yes |
| 安装类型 | Surface Mount (BGA) |
| RoHS 状态 | Compliant |
H5ANAG4NBJR-UHC fbga-96 (pbga96) 引脚配置指南
H5ANAG4NBJR-UHC（fbga-96 (pbga96) 封装）的引脚配置。 引脚编号、功能和连接图在制造商数据手册中定义。请参阅该手册以了解确切的封装尺寸和焊接指南。
暂无详细引脚数据： H5ANAG4NBJR-UHC.
请参阅 数据手册 以查看完整引脚配置。
典型应用
H5ANAG4NBJR-UHC 适用于 6 应用s: Industrial Controllers and Automation, FPGA Processing Cards, Embedded Computing Modules, Networking and Communication Equipment, Data Logging and Firmware Boot Systems, Test and Measurement Instrumentation.
Industrial Controllers and Automation
The H5ANAG4NBJR-UHC's -40C to +95C rating directly matches industrial control environments where cabinets and motor drives see temperature extremes. Its 4Gbit x16 organization provides 512MB of working memory for PLC logic, motion profiles, and HMI buffers without requiring a 64-bit memory bus, simplifying PCB routing on dense controller boards. Features such as asynchronous reset enable deterministic recovery after brown-out events, while auto self-refresh preserves process data during power-saving states. Placing the FBGA-96 close to an SoC or FPGA memory controller with fly-by addressing and dynamic ODT yields a robust soldered-down memory subsystem that outperforms socketed alternatives in vibration-prone factory settings.
推荐
FPGA Processing Cards
FPGA-based data acquisition, image processing, and protocol conversion cards frequently pair an Arria 10-class device with one or two x16 DDR4 components. The H5ANAG4NBJR-UHC's 1.6 GHz-class interface matches the hardened DDR4 memory controllers in these FPGAs, and its x16 data width allows two devices to form a 32-bit bus for higher aggregate bandwidth. Write leveling and ZQ calibration features are essential for the fly-by address topology these cards use, tightening timing margins at the DDR4-1600 operating point. The soldered FBGA-96 footprint withstands PCIe card handling better than SODIMM sockets, and the 1.2V rail integrates cleanly with the card's low-voltage power tree.
推荐
Embedded Computing Modules
System-on-module (SoM) and computer-on-module designs use soldered x16 DDR4 for reliability and height constraints. The H5ANAG4NBJR-UHC offers 512MB in a compact 96-ball FBGA that fits under or beside the processor on a sub-100mm module, and its -40C to +95C range supports conformally coated modules deployed outdoors or in vehicles. The data mask function allows byte-granular writes from the CPU caches without read-modify-write overhead, and CRC improves link reliability when modules operate in electrically noisy enclosures. Its 1.14V to 1.26V supply range tolerates rail droop from shared module regulators, and power estimators can use the DDR4 IDD tables for thermal budgeting inside sealed housings.
推荐
Networking and Communication Equipment
Switch, router, and gateway line cards use DDR4 for packet buffers, flow tables, and management-plane memory. The H5ANAG4NBJR-UHC supplies 4Gbit per device, and its CRC and write-leveling features align with the long, lightly loaded trace topologies typical of telecom boards. Dynamic ODT lets the controller retune termination as bus loading changes between training and runtime, protecting eye margins across the -40C to +95C telecom temperature envelope. The x16 width is efficient for 16- or 32-bit buffer architectures common in embedded network processors, and the asynchronous reset pin supports the watchdog-driven recovery schemes required for carrier-grade uptime targets.
推荐
Data Logging and Firmware Boot Systems
Distributor listings for this DDR4 family cite embedded logging and firmware boot as core use cases. The H5ANAG4NBJR-UHC's auto self-refresh maintains logged data during standby with microamp-class retention current, making it suitable as high-speed scratch memory ahead of nonvolatile storage in data recorders. Its 512MB capacity holds vibration, telemetry, or diagnostic logs collected at kHz sample rates, and the asynchronous reset input allows a supervisor IC to deterministically recover the memory subsystem after a fault. The FBGA-96 package's low profile suits recorders and gateway devices with constrained enclosure heights, and the 1.2V rail keeps standby power budgets low in battery-backed designs.
推荐
Test and Measurement Instrumentation
Oscilloscope, logic analyzer, and data-acquisition front ends require deep capture memory with guaranteed timing across the full operating range. The H5ANAG4NBJR-UHC's 1.6 GHz-class interface supports the sustained streaming rates these instruments need when x16 devices are ganged into 32- or 64-bit capture banks, delivering several GB/s of aggregate write bandwidth. Write leveling and ZQ calibration maintain timing closure on the long, impedance-controlled traces typical of instrument mainboards, while the -40C to +95C rating covers bench-to-field deployment. The soldered FBGA-96 mounting eliminates socket contact resistance that would otherwise degrade high-speed DQS strobe integrity in repeated thermal-cycling service.
推荐
推荐产品汇总
工程参考数据： H5ANAG4NBJR-UHC ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | H5ANAG4NBJR-RDC | H5ANAG4NBJR-PBC | H5AN4G6NBJR-UHC | H5ANAG6NBJR-UHC | H5ANAG8NBJR-UHC |
|---|---|---|---|---|---|---|
| Package | FBGA-96 (PBGA96) | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same |
| Brand | SK hynix | SK hynix | SK hynix | SK hynix | SK hynix | SK hynix |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 6 Gbit | 8 Gbit |
| Organization | 256M x16 | 256M x16 | 256M x16 | 256M x16 | x16 (verify per datasheet) | x16 (verify per datasheet) |
| Supply Voltage | 1.14 V to 1.26 V | 1.14 V to 1.26 V | 1.14 V to 1.26 V | 1.14 V to 1.26 V | 1.14 V to 1.26 V | 1.14 V to 1.26 V |
| Key Features | Auto self-refresh, DM, async reset, dynamic ODT, ZQ cal, write leveling, CRC | Same DDR4 feature set | Same DDR4 feature set | Same feature set (per LCSC listing) | Same DDR4 feature set | Same DDR4 feature set |
关键差异点
- Extended industrial temperature range （对比 H5ANAG4NBJR-PBC)
- Cost-efficient 4Gbit capacity point （对比 H5ANAG8NBJR-UHC)
- Documented sibling with verified distributor data （对比 H5AN4G6NBJR-UHC)
设计说明
Route the DDR4 x16 interface with fly-by topology for address/command/control and point-to-point for DQ/DQS/DM. Length-match each DQS pair to its DQ byte lane within the tolerance recommended in the Intel/Arria 10 memory design guidelines, and match CK to address/command per the controller's calibration budget. Use solid, unbroken reference planes beneath all DDR4 traces; on a 4-layer board place VSS as the reference for DQ routing. The FBGA-96 escape pattern requires via-in-pad or dog-bone escapes with short stubs to preserve signal integrity at DDR4-1600-class rates.
Supply the H5ANAG4NBJR-UHC from a 1.2V rail regulated within 1.14V to 1.26V. Estimated: at DDR4-1600 with moderate activity, a 4Gbit x16 device draws on the order of a few hundred milliamperes average; use the datasheet IDD tables for your exact read/write mix to size the regulator. Provide bulk capacitance (e.g., 47uF to 100uF per device group) plus 0.1uF/10uF ceramics at VDD ball groups. Confirm whether VPP (approx. 2.5V) is required per the datasheet pin list and decouple it separately. Verify power-up ramp-rate compliance for correct DDR4 initialization.
Enable ZQ calibration (drive a precision RZQ resistor, typically 240 ohm, to ZQ ball) and configure dynamic ODT in the controller so termination adapts between write and read phases; this recovers eye margin lost to stubs and plane discontinuities. Run memory training at both -40C and +85C board temperatures to confirm read/write margins across the full -40C to +95C range, since DDR4 timing parameters shift with temperature and ODT accuracy depends on the calibration. Keep DQS strobes as the timing reference per byte lane and use write leveling to remove flight-time skew on the fly-by address bus.
合规信息
JLCPCB listing explicitly marks the part as ROHS. REACH, halogen-free, and conflict-minerals status not stated in provided data.
