H5AN4G8NBJR-VKIR vs H5AN4G8NBJR-UHC 对比

详细并排对比 H5AN4G8NBJR-VKIR 出自 SK hynix 和 H5AN4G8NBJR-UHC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN4G8NBJR-VKIR H5AN4G8NBJR-VKIR - 4Gb DDR4 2666Mbps DRAM | SK hynix

H5AN4G8NBJR-VKIR - 4Gb DDR4 2666Mbps DRAM | SK hynix

H5AN4G8NBJR-VKIR ✓ 量产中
SK hynix
H5AN4G8NBJR-UHC H5AN4G8NBJR-UHC - 4Gb DDR4 SDRAM 2400, 1.2V | SK Hynix

H5AN4G8NBJR-UHC - 4Gb DDR4 SDRAM 2400, 1.2V | SK Hynix

H5AN4G8NBJR-UHC ✓ 量产中

规格对比

参数 H5AN4G8NBJR-VKIR H5AN4G8NBJR-UHC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.98 $3.18
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 4 Gb 4 Gbit
存储组织 512M x 8 512M x 8
数据速率 2666 Mbps per pin 2400 Mbps (PC2400)
Supply Voltage (VDD) 1.2 V —
封装 78-ball FBGA TFBGA-78 (11 x 7.5 mm)
安装类型 Surface Mount Surface Mount
Operating Temperature (Industrial) -40C to +85C (case) —
Extended Temperature Range +85C to +95C (case, per datasheet conditions) —
Technology CMOS DRAM CMOS DRAM
Product Family H5AN4G4/6/8NBJR series —
Speed Grade Code -VKI —
Packing Suffix R (Tape & Reel) —
VPP Supply [DATA_NEEDED: VPP supply voltage] —
CAS 延迟 [DATA_NEEDED: CAS latency] [DATA_NEEDED: CAS latency for -UHC speed bin]
Package Dimensions [DATA_NEEDED: package dimensions] —
Refresh [DATA_NEEDED: refresh interval specification] [DATA_NEEDED: refresh rate 1x/2x/4x support]
电源电压 — 1.2 V
接口 — DDR4 (JEDEC)
Lifecycle Code — Active
RoHS 状态 — Compliant (Rohs Code: Yes)
REACH Compliance — Compliant
Manufacturer — SK Hynix Inc.
工作温度 — [DATA_NEEDED: operating temperature range]

数据手册与资源

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