H5AN8G4NAFR-PBC vs MT40A1G8AG-062E 对比

详细并排对比 H5AN8G4NAFR-PBC 出自 SK hynix 和 MT40A1G8AG-062E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN8G4NAFR-PBC H5AN8G4NAFR-PBC - 8Gb DDR4 SDRAM 1.2V | SK hynix

H5AN8G4NAFR-PBC - 8Gb DDR4 SDRAM 1.2V | SK hynix

H5AN8G4NAFR-PBC ✓ 量产中
Micron Technology
MT40A1G8AG-062E MT40A1G8AG-062E - 8Gb DDR4 SDRAM 3200Mb/s x8 | Micron

MT40A1G8AG-062E - 8Gb DDR4 SDRAM 3200Mb/s x8 | Micron

MT40A1G8AG-062E ✓ 量产中

规格对比

参数 H5AN8G4NAFR-PBC MT40A1G8AG-062E
品牌 SK hynix Micron Technology
分类 DRAM Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.55 $3.10
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 8 Gb —
存储组织 2Gb x 4 1G x 8
Interface Voltage (VDD/VDDQ) 1.2 V +/- 0.06 V —
Wordline Pump Voltage (VPP) 2.5 V (+0.25/-0.125 V) —
Speed Bins (per datasheet) DDR4-1600 / 1866 / 2133 / 2400 (DLL ON) —
Bank Groups 4 (BG0-BG1) —
Banks 16 (4 bank groups x 4 banks) —
Row Address A0-A16 (17 bits) —
封装 78-ball FBGA 78-FBGA (7.5 x 11 mm)
安装类型 Surface Mount Surface Mount (BGA)
Technology CMOS —
Lead-Free / Halogen-Free Yes (RoHS Compliant per datasheet) —
RoHS 状态 Compliant [DATA_NEEDED: RoHS status]
工作温度范围 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
CAS 延迟 [DATA_NEEDED: CL for PBC speed bin] —
Geardown Mode Note DDR4-1600/1866/2133/2400 bins valid only when Geardown Mode is disabled —
存储容量 — 8 Gbit
接口 — Parallel
Clock Frequency — 1.6 GHz (DDR4-3200, 3200 MT/s data rate)
Clock Cycle Time — 19 ns class (-062E speed grade)
Supply Voltage (VDD) — 1.2 V
Temperature Grade — Automotive (AUT)
Access Time (CAS Latency class) — DDR4-3200 timing class (tAA per datasheet)
Bank Group Architecture — Yes (DDR4 bank groups)
Termination — On-Die Termination (ODT)
CA Parity — Supported (DDR4 command/address parity)
Packaging Option — Tape and Reel (TR / :R suffix)
Refresh Rate — [DATA_NEEDED: refresh rate]

数据手册与资源

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