H5AN8G6NAFR-RDC vs H5AN8G6NAFR-PBC 对比

详细并排对比 H5AN8G6NAFR-RDC 出自 SK hynix 和 H5AN8G6NAFR-PBC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN8G6NAFR-RDC H5AN8G6NAFR-RDC - 8Gb DDR4 SDRAM 512Mx16 | SK Hynix

H5AN8G6NAFR-RDC - 8Gb DDR4 SDRAM 512Mx16 | SK Hynix

H5AN8G6NAFR-RDC ✓ 量产中
SK hynix
H5AN8G6NAFR-PBC H5AN8G6NAFR-PBC - 8Gb DDR4 SDRAM 1.2V TFBGA-96 | SK hynix

H5AN8G6NAFR-PBC - 8Gb DDR4 SDRAM 1.2V TFBGA-96 | SK hynix

H5AN8G6NAFR-PBC ✓ 量产中

规格对比

参数 H5AN8G6NAFR-RDC H5AN8G6NAFR-PBC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.05 $3.55
存储器类型 DDR4 SDRAM DDR4 SDRAM
Memory Density 8 Gb —
存储组织 512M x 16 512M x 16
电源电压 1.2 V —
接口 DDR4 (JEDEC-standard) —
Access Mode Multi Bank Page Burst —
Package Code TFBGA —
Package Shape Rectangular —
Number of Terminals 96 96
安装类型 Surface Mount Surface Mount
Temperature Grade OTHER (per Partstack listing) —
Technology CMOS —
RoHS 状态 Compliant (Lead-Free & Halogen-Free) Compliant (Lead-Free & Halogen-Free)
Speed Grade -RDC (see datasheet for bin timing) —
Family H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC —
Max Clock Rate [DATA_NEEDED: max clock rate for -RDC bin] —
工作温度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Density — 8 Gbit
VDD Supply Voltage — 1.20 V +/- 0.06 V
VDDQ Supply Voltage — 1.20 V +/- 0.06 V
VPP Supply Voltage — 2.5 V +0.25/-0.125 V
接口类型 — DDR4 (parallel, double data rate)
Speed Bins Supported — DDR4-1600 / 1866 / 2133 / 2400 (datasheet speed bin tables)
Refresh — Auto / Self Refresh
DLL — DLL ON mode for speed bin operation
Clock — Differential clock (CK/CK#)
封装 — TFBGA-96 (rectangular)
Composition — CMOS

数据手册与资源

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