H5AN8G6NAFR-RDC vs MT40A512M16JY-075E 对比
详细并排对比 H5AN8G6NAFR-RDC 出自 SK hynix 和 MT40A512M16JY-075E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN8G6NAFR-RDC | MT40A512M16JY-075E |
|---|---|---|
| 品牌 | SK hynix | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $3.05 | $30.50 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Memory Density | 8 Gb | — |
| 存储组织 | 512M x 16 | 512M x 16 |
| 电源电压 | 1.2 V | — |
| 接口 | DDR4 (JEDEC-standard) | Parallel |
| Access Mode | Multi Bank Page Burst | — |
| Package Code | TFBGA | — |
| Package Shape | Rectangular | — |
| Number of Terminals | 96 | — |
| 安装类型 | Surface Mount | Surface Mount |
| Temperature Grade | OTHER (per Partstack listing) | — |
| Technology | CMOS | — |
| RoHS 状态 | Compliant (Lead-Free & Halogen-Free) | Compliant |
| Speed Grade | -RDC (see datasheet for bin timing) | — |
| Family | H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC | — |
| Max Clock Rate | [DATA_NEEDED: max clock rate for -RDC bin] | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | — |
| 存储容量 | — | 8 Gbit |
| Clock Frequency | — | 1.33 GHz |
| 数据速率 | — | 2666 MT/s |
| Supply Voltage (VDD/VDDQ) | — | 1.14V to 1.26V |
| VPP Voltage | — | 2.5V (-125mV, +250mV) |
| 封装 | — | 96-FBGA (8x14) |
| 工作温度范围 | — | 0°C to +95°C (TC) |
| Refresh Time | — | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C |
| 特性 | — | Auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, CRC |
| I/O Type | — | 1.2V pseudo open-drain |