H5AN8G6NAFR-UHC vs H5AN8G6NCJR-PBC 对比

详细并排对比 H5AN8G6NAFR-UHC 出自 SK hynix 和 H5AN8G6NCJR-PBC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN8G6NAFR-UHC H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 512Mx16 | SK hynix

H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 512Mx16 | SK hynix

H5AN8G6NAFR-UHC ✓ 量产中
SK hynix
H5AN8G6NCJR-PBC H5AN8G6NCJR-PBC - 8Gb DDR4 SDRAM 2666Mbps FBGA-96 | SK hynix

H5AN8G6NCJR-PBC - 8Gb DDR4 SDRAM 2666Mbps FBGA-96 | SK hynix

H5AN8G6NCJR-PBC ✓ 量产中

规格对比

参数 H5AN8G6NAFR-UHC H5AN8G6NCJR-PBC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $5.74 $3.30
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 8 Gb —
存储组织 512M x 16 —
电源电压 1.2 V —
数据速率 2400 MT/s [DATA_NEEDED: exact speed grade of -PBC suffix]
封装 FBGA-96 FBGA-96 (96-ball fine-pitch BGA)
工作温度 0°C to +85°C 0C to +95C
Number of Terminals 96 —
Package Code TFBGA —
Lead-Free Yes —
无卤 Yes —
RoHS Compliant Yes —
CAS 延迟 [DATA_NEEDED: CAS Latency] —
Burst Length 8, 4 (with burst chop) —
Refresh Auto self-refresh —
Memory Organization — 8Gb x16 (512M x 16)
存储容量 — 8 Gbit
Family Data Rate Range — Up to 2666 Mbps (family: H5AN8G6NCJR-xxC)
Supply Voltage (VDD) — 1.2 V
安装类型 — Surface Mount
接口 — Parallel, synchronous to both clock edges
Auto Self-Refresh — Yes
Auto Precharge — Yes
Asynchronous Reset — Yes
Data Mask Function — Yes
Write Leveling — Yes
CRC Function — Yes
Dynamic On-Die Termination (ODT) — Yes
ZQ Calibration — Yes
Lead-Free / Halogen-Free — Yes (family datasheet: Lead-Free & Halogen-Free, RoHS compliant)
RoHS 状态 — Compliant

数据手册与资源

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