H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 512Mx16 | SK hynix
料号： H5AN8G6NAFR-UHC ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $9.8438 | $9.84 |
| 10 | $7.1094 | $71.09 |
| 100 | $6.2891 | $628.91 |
| 500 | $6.0156 | $3,007.80 |
| 1,000 | $5.7422 | $5,742.20 |
H5AN8G6NAFR-UHC 概述
DDR4 SDRAM is a type of synchronous dynamic random-access memory that transfers data on both rising and falling edges of the clock, doubling the data rate compared to single-data-rate SDRAM. It is the fourth generation of DDR memory, offering higher speed, lower voltage (1.2V vs 1.5V for DDR3), and improved power efficiency. DDR4 is widely used in servers, desktops, laptops, and embedded systems where high memory bandwidth and capacity are critical.
Key features include fully synchronous operation referenced to both clock edges, programmable CAS latency, burst lengths of 8 and 4 (with burst chop), on-die termination (ODT) for signal integrity, and ZQ calibration for improved timing. The device supports auto self-refresh, auto precharge, data mask, write leveling, and CRC error detection, enhancing reliability in high-speed systems. It is lead-free and halogen-free, compliant with RoHS.
Architecturally, the H5AN8G6NAFR-UHC uses a 20nm-class process technology, enabling high density with low power consumption. The 512M x 16 organization is ideal for memory modules and embedded applications requiring a 16-bit data bus. The FBGA-96 package provides excellent thermal and electrical performance, with a maximum operating temperature of 85°C.
Typical applications include DDR4 memory modules (UDIMM, SODIMM, RDIMM), servers, networking equipment, and high-performance computing systems. Its high bandwidth and low latency make it suitable for data-intensive workloads.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at 2400 MT/s. The device requires a 1.2V VDD and 2.5V VPP supply for wordline boost.
直接替换替代料： H5AN8G6NAFR-UHC ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： H5AN8G6NAFR-UHC （相同外形与封装尺寸） ——差异在于 Package, Speed Grade, Data Rate, Interface, Organization.
快速对比工具——选择替代料号进行并排对比：
MT41K256M16HA-125
✓ 有现货
$6.3636 / 个
查看数据手册 →K4A8G165WC-BCTD
✓ 有现货
$41.2 / 个
查看数据手册 →NT5CC256M16DP-DIH
✓ 有现货
$20 / 个
查看数据手册 →H5AN8G6NAFR-UHC 最大额定值与电气特性
| 存储器类型 | DDR4 SDRAM |
| Density | 8 Gb |
| 存储组织 | 512M x 16 |
| 电源电压 | 1.2 V |
| 数据速率 | 2400 MT/s |
| 封装 | FBGA-96 |
| 工作温度 | 0°C to +85°C |
| Number of Terminals | 96 |
| Package Code | TFBGA |
| Lead-Free | Yes |
| 无卤 | Yes |
| RoHS Compliant | Yes |
| Burst Length | 8, 4 (with burst chop) |
| Refresh | Auto self-refresh |
H5AN8G6NAFR-UHC 引脚配置
| 引脚 A1 | VDD — Power supply (1.2V) |
| 引脚 A2 | DQ0 — Data input/output 0 |
| 引脚 A3 | DQ1 — Data input/output 1 |
| 引脚 B1 | VSS — Ground |
| 引脚 B2 | DQ2 — Data input/output 2 |
| 引脚 B3 | DQ3 — Data input/output 3 |
| 引脚 C1 | VDDQ — Power supply for output buffers |
| 引脚 C2 | DQ4 — Data input/output 4 |
| 引脚 C3 | DQ5 — Data input/output 5 |
| 引脚 D1 | VSSQ — Ground for output buffers |
| 引脚 D2 | DQ6 — Data input/output 6 |
| 引脚 D3 | DQ7 — Data input/output 7 |
典型应用
H5AN8G6NAFR-UHC 适用于 6 应用s: Server Memory Modules, Networking Equipment, Embedded Systems, High-Performance Computing, Consumer Electronics, Automotive Infotainment.
Server Memory Modules
The H5AN8G6NAFR-UHC is ideal for RDIMM and LRDIMM modules used in servers, providing high density and bandwidth for data-intensive workloads. Its 8Gb density and 2400 MT/s speed enable large memory capacity and fast data transfer, essential for cloud computing and enterprise applications. The device's low 1.2V operation reduces power consumption, improving energy efficiency in data centers. With features like CRC and write leveling, it ensures reliable operation in high-speed, multi-rank configurations.
推荐
Networking Equipment
In networking switches and routers, the H5AN8G6NAFR-UHC provides high-bandwidth memory for packet buffering and forwarding tables. Its 2400 MT/s data rate supports line-rate processing, while the 8Gb density allows large lookup tables. The device's low power consumption is critical for dense line cards. The x16 organization simplifies PCB routing, and the FBGA-96 package offers good thermal performance in constrained environments.
推荐
Embedded Systems
For embedded applications like industrial PCs and medical devices, the H5AN8G6NAFR-UHC offers a balance of density, speed, and power. Its 8Gb capacity supports complex applications, while the 1.2V supply reduces heat generation. The device's wide operating temperature range (0°C to +85°C) suits industrial environments. The FBGA-96 package is compact, enabling small form-factor designs. Features like auto self-refresh simplify power management in battery-powered systems.
推荐
High-Performance Computing
In HPC systems, the H5AN8G6NAFR-UHC provides the memory bandwidth needed for scientific simulations and AI workloads. Its 2400 MT/s speed and 8Gb density enable large datasets to be processed quickly. The device's low latency and high throughput are essential for parallel processing. The x16 organization allows flexible memory configurations, and the device's reliability features (CRC, ECC support) ensure data integrity in long-running computations.
推荐
Consumer Electronics
The H5AN8G6NAFR-UHC is used in high-end consumer devices like gaming PCs and workstations, where memory speed and capacity impact performance. Its 2400 MT/s data rate supports smooth multitasking and gaming, while the 8Gb density allows large applications. The device's low power consumption is beneficial for laptops, extending battery life. The FBGA-96 package is suitable for compact motherboards, and the device's RoHS compliance meets environmental regulations.
推荐
Automotive Infotainment
In automotive infotainment systems, the H5AN8G6NAFR-UHC provides reliable memory for navigation, multimedia, and connectivity features. Its wide temperature range (0°C to +85°C) is suitable for cabin environments, and the device's low power consumption helps manage vehicle power budgets. The 8Gb density supports complex user interfaces, while the 2400 MT/s speed ensures responsive performance. The device's robustness and long lifecycle make it suitable for automotive applications.
推荐
推荐产品汇总
工程参考数据： H5AN8G6NAFR-UHC ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | H5AN8G6NAFR-UHC | MT41K256M16HA-125 | K4A8G165WC-BCTD |
|---|---|---|---|---|
| Package | FBGA-96 | FBGA-96 | FBGA-96 | FBGA-96 |
| Brand | SK hynix | SK hynix | Micron | Samsung |
| Density | 8 Gb | 8 Gb | 4 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 | 256M x 16 | 512M x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Data Rate | 2400 MT/s | 2400 MT/s | 2400 MT/s | 2666 MT/s |
| Operating Temperature | 0°C to +85°C | 0°C to +85°C | 0°C to +95°C | 0°C to +85°C |
| RoHS | Compliant | Compliant | Compliant | Compliant |
关键差异点
- Higher density than some alternatives （对比 MT41K256M16HA-125)
- Lower power consumption （对比 K4A8G165WC-BCTD)
- Proven reliability features （对比 NT5CC256M16DP-DIH)
设计说明
For DDR4 routing at 2400 MT/s, maintain controlled impedance of 40-50 ohms for single-ended signals and 80-100 ohms for differential pairs. Keep trace lengths matched within 10 mils for data and address/control groups. Use ground planes to minimize noise and ensure proper decoupling with 0.1uF and 1uF capacitors near each VDD and VDDQ pin.
The H5AN8G6NAFR-UHC requires a 1.2V VDD supply and a 2.5V VPP supply for wordline boost. Use low-impedance power planes and place decoupling capacitors close to the device. The VPP supply must be stable and noise-free to ensure reliable operation. Refer to the datasheet for recommended power-up sequencing.
The FBGA-96 package has a maximum operating temperature of 85°C. Ensure adequate airflow or heatsinking in high-ambient environments. The device's power dissipation depends on data rate and activity; calculate thermal budget using the datasheet's thermal resistance values. For high-density modules, consider thermal simulation.
合规信息
Lead-free and halogen-free per datasheet. RoHS compliant. Not AEC-Q100 qualified.
