H5AN8G6NAFR-VKC vs H5AN8G6NCJR-VKC 对比

详细并排对比 H5AN8G6NAFR-VKC 出自 SK hynix 和 H5AN8G6NCJR-VKC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN8G6NAFR-VKC H5AN8G6NAFR-VKC - 8Gb DDR4 SDRAM 512Mx16 1.2V | SK Hynix

H5AN8G6NAFR-VKC - 8Gb DDR4 SDRAM 512Mx16 1.2V | SK Hynix

H5AN8G6NAFR-VKC ✓ 量产中
SK hynix
H5AN8G6NCJR-VKC H5AN8G6NCJR-VKC - 8Gb DDR4 SDRAM 2666Mbps | SK Hynix

H5AN8G6NCJR-VKC - 8Gb DDR4 SDRAM 2666Mbps | SK Hynix

H5AN8G6NCJR-VKC ✓ 量产中

规格对比

参数 H5AN8G6NAFR-VKC H5AN8G6NCJR-VKC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $6.25 $60.00
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 8 Gb 8 Gb
存储组织 512M x 16 512M x 16
Core Supply Voltage 1.2 V —
Technology CMOS —
封装 FBGA-96 (PBGA96) FBGA-96
Speed Grade -VKC (DDR4-2666 class, per SK Hynix part numbering) —
Data Rate Class Up to 2666 MT/s (per -VKC speed code) —
Family H5AN8G4NAFR / H5AN8G8NAFR / H5AN8G6NAFR —
安装类型 Surface Mount (BGA) —
RoHS 状态 Lead-Free & Halogen-Free, RoHS Compliant —
Application Main memory (high density, high bandwidth) —
工作温度 [DATA_NEEDED: operating temperature range] 0°C to +95°C
Refresh [DATA_NEEDED: refresh mode specification] —
CAS 延迟 [DATA_NEEDED: CAS latency for -VKC bin] [DATA_NEEDED: CAS Latency]
Package Dimensions [DATA_NEEDED: package dimensions] —
MSL 等级 [DATA_NEEDED: moisture sensitivity level] —
数据速率 — 2666 Mbps
Supply Voltage (VDD) — 1.2 V (1.14V to 1.26V)
Operating Current (IDD2N) — 28 mA
Operating Current (IDD4R) — 45 mA
Burst Length — 8 (BC4)
Row Address Bits — [DATA_NEEDED: Row Address Bits]
Column Address Bits — [DATA_NEEDED: Column Address Bits]
Lead-Free — Yes
无卤 — Yes
RoHS — Compliant

数据手册与资源

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