H5AN8G6NCJR-RDC vs H5AN8G6NCJR-UHC 对比

详细并排对比 H5AN8G6NCJR-RDC 出自 SK hynix 和 H5AN8G6NCJR-UHC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN8G6NCJR-RDC H5AN8G6NCJR-RDC - 8Gb DDR4 SDRAM 512Mx16 TFBGA-96 | SK hynix

H5AN8G6NCJR-RDC - 8Gb DDR4 SDRAM 512Mx16 TFBGA-96 | SK hynix

H5AN8G6NCJR-RDC ✓ 量产中
SK hynix
H5AN8G6NCJR-UHC H5AN8G6NCJR-UHC - 8Gb DDR4-2400 SDRAM 512Mx16 | SK Hynix

H5AN8G6NCJR-UHC - 8Gb DDR4-2400 SDRAM 512Mx16 | SK Hynix

H5AN8G6NCJR-UHC ✓ 量产中

规格对比

参数 H5AN8G6NCJR-RDC H5AN8G6NCJR-UHC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $19.69 $0.00
Memory Density 8 Gb (8589934592 bit) —
存储组织 512M x 16 512M x 16
存储器类型 DDR4 SDRAM DDR4 SDRAM
Technology CMOS —
Package Code TFBGA (PBGA96) —
Package Shape Rectangular —
Number of Terminals 96 —
安装类型 Surface Mount Surface Mount (BGA)
Temperature Grade OTHER —
Data Rate Family [DATA_NEEDED: specific speed grade Mbps] —
Supply Voltage Class [DATA_NEEDED: nominal VDD per datasheet speed bin] —
工作温度范围 [DATA_NEEDED: min/max C per -RDC bin] —
Auto Self-Refresh Yes Yes
Auto Precharge Yes Yes
Asynchronous Reset Yes Yes
Data Mask Function Yes —
Write Leveling Yes Yes
CRC Yes —
Dynamic On-Chip Termination Yes —
ZQ Calibration Yes Yes
RoHS 状态 Lead-Free & Halogen-Free (RoHS Compliant, per H5AN8G6 family datasheet) [DATA_NEEDED: RoHS certification statement]
Density — 8 Gb
Speed Grade — DDR4-2400 (2400 Mbps/pin)
电源电压 — 1.2 V
封装 — FBGA-96 (96-ball)
工作温度 — 0C to +95C
Data Mask (DM) — Yes
CRC Function — Yes
Dynamic On-Die Termination — Yes
Lead-Free / Halogen-Free — Yes (per family datasheet)

数据手册与资源

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