H5AN8G6NCJR-RDC vs H5AN8G6NCJR-VKC 对比
详细并排对比 H5AN8G6NCJR-RDC 出自 SK hynix 和 H5AN8G6NCJR-VKC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN8G6NCJR-RDC | H5AN8G6NCJR-VKC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $19.69 | $60.00 |
| Memory Density | 8 Gb (8589934592 bit) | — |
| 存储组织 | 512M x 16 | 512M x 16 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Technology | CMOS | — |
| Package Code | TFBGA (PBGA96) | — |
| Package Shape | Rectangular | — |
| Number of Terminals | 96 | — |
| 安装类型 | Surface Mount | — |
| Temperature Grade | OTHER | — |
| Data Rate Family | [DATA_NEEDED: specific speed grade Mbps] | — |
| Supply Voltage Class | [DATA_NEEDED: nominal VDD per datasheet speed bin] | — |
| 工作温度范围 | [DATA_NEEDED: min/max C per -RDC bin] | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask Function | Yes | — |
| Write Leveling | Yes | — |
| CRC | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| RoHS 状态 | Lead-Free & Halogen-Free (RoHS Compliant, per H5AN8G6 family datasheet) | — |
| Density | — | 8 Gb |
| 数据速率 | — | 2666 Mbps |
| Supply Voltage (VDD) | — | 1.2 V (1.14V to 1.26V) |
| 工作温度 | — | 0°C to +95°C |
| 封装 | — | FBGA-96 |
| Operating Current (IDD2N) | — | 28 mA |
| Operating Current (IDD4R) | — | 45 mA |
| Burst Length | — | 8 (BC4) |
| CAS 延迟 | — | [DATA_NEEDED: CAS Latency] |
| Row Address Bits | — | [DATA_NEEDED: Row Address Bits] |
| Column Address Bits | — | [DATA_NEEDED: Column Address Bits] |
| Lead-Free | — | Yes |
| 无卤 | — | Yes |
| RoHS | — | Compliant |