H5AN8G6NCJR-UHC vs H5AN8G6NCJR-RDC 对比

详细并排对比 H5AN8G6NCJR-UHC 出自 SK hynix 和 H5AN8G6NCJR-RDC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN8G6NCJR-UHC H5AN8G6NCJR-UHC - 8Gb DDR4-2400 SDRAM 512Mx16 | SK Hynix

H5AN8G6NCJR-UHC - 8Gb DDR4-2400 SDRAM 512Mx16 | SK Hynix

H5AN8G6NCJR-UHC ✓ 量产中
SK hynix
H5AN8G6NCJR-RDC H5AN8G6NCJR-RDC - 8Gb DDR4 SDRAM 512Mx16 TFBGA-96 | SK hynix

H5AN8G6NCJR-RDC - 8Gb DDR4 SDRAM 512Mx16 TFBGA-96 | SK hynix

H5AN8G6NCJR-RDC ✓ 量产中

规格对比

参数 H5AN8G6NCJR-UHC H5AN8G6NCJR-RDC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $19.69
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 8 Gb —
存储组织 512M x 16 512M x 16
Speed Grade DDR4-2400 (2400 Mbps/pin) —
电源电压 1.2 V —
封装 FBGA-96 (96-ball) —
安装类型 Surface Mount (BGA) Surface Mount
工作温度 0C to +95C —
Auto Self-Refresh Yes Yes
Auto Precharge Yes Yes
Asynchronous Reset Yes Yes
Data Mask (DM) Yes —
Write Leveling Yes Yes
CRC Function Yes —
Dynamic On-Die Termination Yes —
ZQ Calibration Yes Yes
Lead-Free / Halogen-Free Yes (per family datasheet) —
RoHS 状态 [DATA_NEEDED: RoHS certification statement] Lead-Free & Halogen-Free (RoHS Compliant, per H5AN8G6 family datasheet)
Memory Density — 8 Gb (8589934592 bit)
Technology — CMOS
Package Code — TFBGA (PBGA96)
Package Shape — Rectangular
Number of Terminals — 96
Temperature Grade — OTHER
Data Rate Family — [DATA_NEEDED: specific speed grade Mbps]
Supply Voltage Class — [DATA_NEEDED: nominal VDD per datasheet speed bin]
工作温度范围 — [DATA_NEEDED: min/max C per -RDC bin]
Data Mask Function — Yes
CRC — Yes
Dynamic On-Chip Termination — Yes

数据手册与资源

浏览全部产品 创建 BOM 获取报价