H5AN8G6NCJR-VKC vs H5AN8G6NCJR-UHC 对比

详细并排对比 H5AN8G6NCJR-VKC 出自 SK hynix 和 H5AN8G6NCJR-UHC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN8G6NCJR-VKC H5AN8G6NCJR-VKC - 8Gb DDR4 SDRAM 2666Mbps | SK Hynix

H5AN8G6NCJR-VKC - 8Gb DDR4 SDRAM 2666Mbps | SK Hynix

H5AN8G6NCJR-VKC ✓ 量产中
SK hynix
H5AN8G6NCJR-UHC H5AN8G6NCJR-UHC - 8Gb DDR4-2400 SDRAM 512Mx16 | SK Hynix

H5AN8G6NCJR-UHC - 8Gb DDR4-2400 SDRAM 512Mx16 | SK Hynix

H5AN8G6NCJR-UHC ✓ 量产中

规格对比

参数 H5AN8G6NCJR-VKC H5AN8G6NCJR-UHC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $60.00 $0.00
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 8 Gb 8 Gb
存储组织 512M x 16 512M x 16
数据速率 2666 Mbps —
Supply Voltage (VDD) 1.2 V (1.14V to 1.26V) —
工作温度 0°C to +95°C 0C to +95C
封装 FBGA-96 FBGA-96 (96-ball)
Operating Current (IDD2N) 28 mA —
Operating Current (IDD4R) 45 mA —
Burst Length 8 (BC4) —
CAS 延迟 [DATA_NEEDED: CAS Latency] —
Row Address Bits [DATA_NEEDED: Row Address Bits] —
Column Address Bits [DATA_NEEDED: Column Address Bits] —
Lead-Free Yes —
无卤 Yes —
RoHS Compliant —
Speed Grade — DDR4-2400 (2400 Mbps/pin)
电源电压 — 1.2 V
安装类型 — Surface Mount (BGA)
Auto Self-Refresh — Yes
Auto Precharge — Yes
Asynchronous Reset — Yes
Data Mask (DM) — Yes
Write Leveling — Yes
CRC Function — Yes
Dynamic On-Die Termination — Yes
ZQ Calibration — Yes
Lead-Free / Halogen-Free — Yes (per family datasheet)
RoHS 状态 — [DATA_NEEDED: RoHS certification statement]

数据手册与资源

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