H5AN8G6NDJR-XNC vs MT40A512M16JY-075E 对比
详细并排对比 H5AN8G6NDJR-XNC 出自 SK hynix 和 MT40A512M16JY-075E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN8G6NDJR-XNC | MT40A512M16JY-075E |
|---|---|---|
| 品牌 | SK hynix | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $55.68 | $30.50 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 8 Gb | 8 Gbit |
| Memory Organization | 512M x16 | — |
| 数据速率 | 3200 Mbps | 2666 MT/s |
| Supply Voltage (VDD) | 1.2 V (max 1.26 V) | — |
| 封装 | FBGA-96 (13x7.5 mm) | 96-FBGA (8x14) |
| Number of Terminals | 96 | — |
| Maximum Operating Temperature | 85 °C | — |
| Input/Output Type | COMMON | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| 无卤 | Yes | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Data Mask | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| Write Leveling | Yes | — |
| Asynchronous Reset | Yes | — |
| 存储组织 | — | 512M x 16 |
| Clock Frequency | — | 1.33 GHz |
| Supply Voltage (VDD/VDDQ) | — | 1.14V to 1.26V |
| VPP Voltage | — | 2.5V (-125mV, +250mV) |
| 接口 | — | Parallel |
| 安装类型 | — | Surface Mount |
| 工作温度范围 | — | 0°C to +95°C (TC) |
| Refresh Time | — | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C |
| RoHS 状态 | — | Compliant |
| 特性 | — | Auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, CRC |
| I/O Type | — | 1.2V pseudo open-drain |